先进工艺中逆变器的纳米探针表征

J.S. Tsai, C.H. Yen, D.Y. Tzou, K.T. Ho
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引用次数: 0

摘要

随着半导体工艺节点进入先进工艺时代,利用纳米探测系统提取器件和电路的电学行为变得更加具有挑战性。不仅在较小的触点或通孔处探测变得困难,而且脱工艺技巧对探测条件的影响较大,可能导致电性能不正确且难以解释原因。本研究发展了在FinFET过程中提取正确的逆变电池传递曲线的样品制备技术。
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Inverter Characterization in Advanced Process by Nanoprobing
Abstract As the semiconductor process node enters into advanced process era, it is more challenging to extract electrical behavior of devices and circuits by nanoprobing systems. Not only probing is getting difficult at smaller contact or via, but also the deprocess tricks would have large influence on probing conditions, which could cause incorrect electrical performance and hard to explain the reasons. This research develops the technique of sample preparation to extract correct transfer curve of inverter cell in FinFET process.
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