{"title":"先进工艺中逆变器的纳米探针表征","authors":"J.S. Tsai, C.H. Yen, D.Y. Tzou, K.T. Ho","doi":"10.31399/asm.cp.istfa2023p0246","DOIUrl":null,"url":null,"abstract":"Abstract As the semiconductor process node enters into advanced process era, it is more challenging to extract electrical behavior of devices and circuits by nanoprobing systems. Not only probing is getting difficult at smaller contact or via, but also the deprocess tricks would have large influence on probing conditions, which could cause incorrect electrical performance and hard to explain the reasons. This research develops the technique of sample preparation to extract correct transfer curve of inverter cell in FinFET process.","PeriodicalId":20443,"journal":{"name":"Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverter Characterization in Advanced Process by Nanoprobing\",\"authors\":\"J.S. Tsai, C.H. Yen, D.Y. Tzou, K.T. Ho\",\"doi\":\"10.31399/asm.cp.istfa2023p0246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract As the semiconductor process node enters into advanced process era, it is more challenging to extract electrical behavior of devices and circuits by nanoprobing systems. Not only probing is getting difficult at smaller contact or via, but also the deprocess tricks would have large influence on probing conditions, which could cause incorrect electrical performance and hard to explain the reasons. This research develops the technique of sample preparation to extract correct transfer curve of inverter cell in FinFET process.\",\"PeriodicalId\":20443,\"journal\":{\"name\":\"Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2023p0246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2023p0246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inverter Characterization in Advanced Process by Nanoprobing
Abstract As the semiconductor process node enters into advanced process era, it is more challenging to extract electrical behavior of devices and circuits by nanoprobing systems. Not only probing is getting difficult at smaller contact or via, but also the deprocess tricks would have large influence on probing conditions, which could cause incorrect electrical performance and hard to explain the reasons. This research develops the technique of sample preparation to extract correct transfer curve of inverter cell in FinFET process.