含水多价离子电池的钾离子预插MnO2。

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers of Optoelectronics Pub Date : 2023-12-01 DOI:10.1007/s12200-023-00093-0
Zikang Xu, Ruiqi Ren, Hang Ren, Jingyuan Zhang, Jinyao Yang, Jiawen Qiu, Yizhou Zhang, Guoyin Zhu, Liang Huang, Shengyang Dong
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引用次数: 0

摘要

二氧化锰(MnO2)作为多价离子(如Mg2+和Al3+)存储的正极材料,由于其高初始容量而被研究。然而,在多价离子插入/提取过程中,MnO2的晶体结构会部分坍塌,导致在少数充放电循环中容量衰减迅速。本文通过将钾离子(K+)预插到δ-MnO2中,合成了一种钾离子预插MnO2 K0.21MnO2·0.31H2O (KMO),作为多价离子电池可靠的正极材料。制备的KMO在1 a /g下具有185 mAh/g的高可逆容量,在1 mol/L MgSO4电解质中具有良好的倍率性能和循环稳定性。此外,我们观察到铝离子(Al3+)也可以插入到KMO阴极中。本研究为多价离子电池锰基氧化物的改性提供了一种有效的方法。
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Potassium ion pre-intercalated MnO2 for aqueous multivalent ion batteries.

Manganese dioxide (MnO2), as a cathode material for multivalent ion (such as Mg2+ and Al3+) storage, is investigated due to its high initial capacity. However, during multivalent ion insertion/extraction, the crystal structure of MnO2 partially collapses, leading to fast capacity decay in few charge/discharge cycles. Here, through pre-intercalating potassium-ion (K+) into δ-MnO2, we synthesize a potassium ion pre-intercalated MnO2, K0.21MnO2·0.31H2O (KMO), as a reliable cathode material for multivalent ion batteries. The as-prepared KMO exhibits a high reversible capacity of 185 mAh/g at 1 A/g, with considerable rate performance and improved cycling stability in 1 mol/L MgSO4 electrolyte. In addition, we observe that aluminum-ion (Al3+) can also insert into a KMO cathode. This work provides a valid method for modification of manganese-based oxides for aqueous multivalent ion batteries.

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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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