Chengxiang Jiao, Kai Huang, Hongli Guo, Xingxia Cui, Qing Yuan, Cancan Lou, Guangqiang Mei, Chunlong Wu, Nan Xu, Limin Cao, Min Feng
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In this 4PPE process, VB electrons of SnSe<sub>2</sub> are resonantly excited into CB2 by adsorbing two photons, followed by the adsorption of another photon to populate the <i>n</i> = 1 IPs before being emitted out to the vacuum by adsorbing one more photon. This results in a double-resonant 4PPE process, which exhibits approximately a 40 times enhancement in photoemission yields compared to cases where one of the resonant pathways, CB2 → IPs, is inhibited by involving a virtual state instead of the IPs in the 4PPE. The double-resonant 4PPE process efficiently excite the bulk VB electrons outside the vacuum, like taking advantage of resonant “ladders” through two real empty electronic states of SnSe<sub>2</sub>. Our results highlight the important applications of mPPE in probing the band-structure, particularly the unoccupied states, of recently emerging main group dichalcogenide semiconductors. Furthermore, the discovered resonant mPPE process contributes to the exploration of their promising optoelectronic applications.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":6.5000,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resonant four-photon photoemission from SnSe2(001)\",\"authors\":\"Chengxiang Jiao, Kai Huang, Hongli Guo, Xingxia Cui, Qing Yuan, Cancan Lou, Guangqiang Mei, Chunlong Wu, Nan Xu, Limin Cao, Min Feng\",\"doi\":\"10.1007/s11467-023-1365-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>High-order nonlinear multiphoton absorption is usually inefficient, but can be enhanced by designing resonant excitations between occupied and unoccupied energy levels. We conducted angle-resolved multi-photon photoemission (mPPE) studies on the SnSe<sub>2</sub>(001) surfaces excited by ultrashort laser pulses. By tuning photon energy and light polarization, we demonstrate the presence of a resonant four-photon photoemission (4PPE) process involving the occupied valence band (VB), the unoccupied second conduction band (CB2) and the unoccupied image-potential state (IPs) of SnSe<sub>2</sub>. In this 4PPE process, VB electrons of SnSe<sub>2</sub> are resonantly excited into CB2 by adsorbing two photons, followed by the adsorption of another photon to populate the <i>n</i> = 1 IPs before being emitted out to the vacuum by adsorbing one more photon. This results in a double-resonant 4PPE process, which exhibits approximately a 40 times enhancement in photoemission yields compared to cases where one of the resonant pathways, CB2 → IPs, is inhibited by involving a virtual state instead of the IPs in the 4PPE. The double-resonant 4PPE process efficiently excite the bulk VB electrons outside the vacuum, like taking advantage of resonant “ladders” through two real empty electronic states of SnSe<sub>2</sub>. Our results highlight the important applications of mPPE in probing the band-structure, particularly the unoccupied states, of recently emerging main group dichalcogenide semiconductors. 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Resonant four-photon photoemission from SnSe2(001)
High-order nonlinear multiphoton absorption is usually inefficient, but can be enhanced by designing resonant excitations between occupied and unoccupied energy levels. We conducted angle-resolved multi-photon photoemission (mPPE) studies on the SnSe2(001) surfaces excited by ultrashort laser pulses. By tuning photon energy and light polarization, we demonstrate the presence of a resonant four-photon photoemission (4PPE) process involving the occupied valence band (VB), the unoccupied second conduction band (CB2) and the unoccupied image-potential state (IPs) of SnSe2. In this 4PPE process, VB electrons of SnSe2 are resonantly excited into CB2 by adsorbing two photons, followed by the adsorption of another photon to populate the n = 1 IPs before being emitted out to the vacuum by adsorbing one more photon. This results in a double-resonant 4PPE process, which exhibits approximately a 40 times enhancement in photoemission yields compared to cases where one of the resonant pathways, CB2 → IPs, is inhibited by involving a virtual state instead of the IPs in the 4PPE. The double-resonant 4PPE process efficiently excite the bulk VB electrons outside the vacuum, like taking advantage of resonant “ladders” through two real empty electronic states of SnSe2. Our results highlight the important applications of mPPE in probing the band-structure, particularly the unoccupied states, of recently emerging main group dichalcogenide semiconductors. Furthermore, the discovered resonant mPPE process contributes to the exploration of their promising optoelectronic applications.
期刊介绍:
Frontiers of Physics is an international peer-reviewed journal dedicated to showcasing the latest advancements and significant progress in various research areas within the field of physics. The journal's scope is broad, covering a range of topics that include:
Quantum computation and quantum information
Atomic, molecular, and optical physics
Condensed matter physics, material sciences, and interdisciplinary research
Particle, nuclear physics, astrophysics, and cosmology
The journal's mission is to highlight frontier achievements, hot topics, and cross-disciplinary points in physics, facilitating communication and idea exchange among physicists both in China and internationally. It serves as a platform for researchers to share their findings and insights, fostering collaboration and innovation across different areas of physics.