{"title":"精确测量的计算以及样品晶体取向对接受 keV 电子辐照的氧化镁单晶的电荷动力学的影响","authors":"Aicha Boughariou, Osama Qays Abdullah, Guy Blaise","doi":"10.1007/s12647-023-00713-2","DOIUrl":null,"url":null,"abstract":"<div><p>This study is performed with a dedicated scanning electron microscope (SEM) which allows the injection of few electrons doses in a large domain of energies and the measures of the secondary electron emission and the induced current created in the sample holder by the charges generated in the sample. In this paper, we present a detailed calcul of the precision measure on the intrinsic Secondary Electron Emission yield <i>σ</i><sub>0</sub> and the stationary electron emission <i>σ</i><sub>st</sub> of magnesium oxide (MgO) single crystals of different crystalline orientation (100), (110) and (111)<sub>.</sub> We notice that the precision measure becomes more and more excellent with increasing <i>n</i> (<i>n</i> is the number of equal time intervals Δ<i>t</i> in which the measure of the induced and secondary currents is carried). The results shown that the crystalline orientation has a significant influence on intrinsic secondary electron emission <i>σ</i><sub>0</sub> at low energies below 7 keV, but for high energies, the loss function of energy extending more deeply, the secondaries are dispersed before their release.</p></div>","PeriodicalId":689,"journal":{"name":"MAPAN","volume":"39 2","pages":"427 - 433"},"PeriodicalIF":1.0000,"publicationDate":"2023-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calculation of Precision Measure and Effect of the Sample Crystallographic Orientation on the Charge Kinetics of MgO Single Crystals Subjected to keV Electron Irradiation\",\"authors\":\"Aicha Boughariou, Osama Qays Abdullah, Guy Blaise\",\"doi\":\"10.1007/s12647-023-00713-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study is performed with a dedicated scanning electron microscope (SEM) which allows the injection of few electrons doses in a large domain of energies and the measures of the secondary electron emission and the induced current created in the sample holder by the charges generated in the sample. In this paper, we present a detailed calcul of the precision measure on the intrinsic Secondary Electron Emission yield <i>σ</i><sub>0</sub> and the stationary electron emission <i>σ</i><sub>st</sub> of magnesium oxide (MgO) single crystals of different crystalline orientation (100), (110) and (111)<sub>.</sub> We notice that the precision measure becomes more and more excellent with increasing <i>n</i> (<i>n</i> is the number of equal time intervals Δ<i>t</i> in which the measure of the induced and secondary currents is carried). The results shown that the crystalline orientation has a significant influence on intrinsic secondary electron emission <i>σ</i><sub>0</sub> at low energies below 7 keV, but for high energies, the loss function of energy extending more deeply, the secondaries are dispersed before their release.</p></div>\",\"PeriodicalId\":689,\"journal\":{\"name\":\"MAPAN\",\"volume\":\"39 2\",\"pages\":\"427 - 433\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MAPAN\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12647-023-00713-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MAPAN","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s12647-023-00713-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Calculation of Precision Measure and Effect of the Sample Crystallographic Orientation on the Charge Kinetics of MgO Single Crystals Subjected to keV Electron Irradiation
This study is performed with a dedicated scanning electron microscope (SEM) which allows the injection of few electrons doses in a large domain of energies and the measures of the secondary electron emission and the induced current created in the sample holder by the charges generated in the sample. In this paper, we present a detailed calcul of the precision measure on the intrinsic Secondary Electron Emission yield σ0 and the stationary electron emission σst of magnesium oxide (MgO) single crystals of different crystalline orientation (100), (110) and (111). We notice that the precision measure becomes more and more excellent with increasing n (n is the number of equal time intervals Δt in which the measure of the induced and secondary currents is carried). The results shown that the crystalline orientation has a significant influence on intrinsic secondary electron emission σ0 at low energies below 7 keV, but for high energies, the loss function of energy extending more deeply, the secondaries are dispersed before their release.
期刊介绍:
MAPAN-Journal Metrology Society of India is a quarterly publication. It is exclusively devoted to Metrology (Scientific, Industrial or Legal). It has been fulfilling an important need of Metrologists and particularly of quality practitioners by publishing exclusive articles on scientific, industrial and legal metrology.
The journal publishes research communication or technical articles of current interest in measurement science; original work, tutorial or survey papers in any metrology related area; reviews and analytical studies in metrology; case studies on reliability, uncertainty in measurements; and reports and results of intercomparison and proficiency testing.