稀土(Tm、Y、Gd 和 Eu)掺杂 ZnS 单层:第一原理比较研究。

IF 2.9 Q3 CHEMISTRY, PHYSICAL Electronic Structure Pub Date : 2023-12-21 DOI:10.1088/2516-1075/ad17d5
A. Es-smairi, N. Fazouan, E. Maskar, Ibrahim Bziz, Mohammed Sabil, Ayan Banik, D. P. Rai
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引用次数: 0

摘要

在本研究中,我们使用密度泛函理论(DFT)方法研究了掺杂了 Tm、Y、Gd 和 Eu(浓度为 6.25%)的 ZnS 纳米片的物理性质。当掺杂 Y 和 Tm 时,非磁性相在能量上是稳定的。然而,当掺杂 Eu 和 Gd 时,铁磁态在热力学上是稳定的,其形成能值为负。所有掺杂体系的优化结构都是平面结构,晶格参数和键长都有所增加。掺杂后,费米级被推向导带,缩小了带隙,表现出典型的 n 型半导体特性。在更宽的光学窗口中,与掺杂钆和铕的系统相比,掺杂锝和掺杂钇的系统在可见光光谱中具有更低的反射率和更出色的透射率。导电性是通过 BoltzTrap 软件包计算得出的。电导率在掺杂后得到增强,适合应用于光电器件、太阳能电池、自旋电子学和热电。
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Rare earth (Tm, Y, Gd, and Eu) doped ZnS monolayer: A comparative first-principles study.
In this current study, we used the density functional theory (DFT) method to examine the physical properties of ZnS nanosheets doped with Tm, Y, Gd, and Eu at a concentration of 6.25%. The non-magnetic phase is energetically stable when doped with Y and Tm. However, the ferromagnetic state is thermodynamically stable when doped with Eu and Gd with a negative formation energy value. The optimized structure is a planar structure for all doped systems, with an increase in the lattice parameter and bond length. On doping the Fermi level is pushed into the conduction band narrowing the band gap, and exhibiting typical n-type semiconducting behaviour. In a wider optical window, Tm and Y-doped systems have lower reflectance and more excellent transmittance than Gd and Eu-doped systems in the visible light spectrum. The electrical conductivity has been calculated using the BoltzTrap package. The electrical conductivity has been enhanced on doping suitable for its application in optoelectronic devices, solar cells, spintronics and thermoelectrics.
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
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