Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds

This research shows that the diffusion of grown-in and implanted Be atoms in III-V considered semiconductor materials, taking place during the RTA process, is perfectly well explained by the “full” version of the kick-out mechanism operating through singly positively ionized Be interstitials and group III self-interstitial ions in all their states of positive charge including neutral. Numerical solutions of the differential equations, corresponding to the considered system of diffusion reactions, have been calculated using the finite difference approach and our elaborate finite difference-Bairstow method. Such a model naturally emerges from most research works, including ours, in the considered field, over the last decades and makes it possible to “reconcile” their different diffusion models. In this study, we also present and analyze the SIMS profiles of the distribution of implanted Be in GaAs at an energy of 100 keV with a high dose of and annealed at temperatures ranging from 700 to 850 °C for à time ranging from 60 to 240s. Keywords: Diffusion, semiconductors, GSMBE, SIMS, RTA.