通过角度分辨光发射光谱分析超导体 Sn4Sb3 的三维电子结构

IF 2.9 Q3 CHEMISTRY, PHYSICAL Electronic Structure Pub Date : 2023-12-19 DOI:10.1088/2516-1075/ad16f4
P. Ding, Xiaoxiao Man, Qingxin Liu, Huan Ma, Bin Liu, Zhi Ren, Kai Liu, Shancai Wang
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引用次数: 0

摘要

层状材料 Sn4Sb3 具有 T c∽1.47 K 的超导性,被认为是拓扑超导体的候选材料。在本研究中,我们利用角度分辨光发射光谱和密度泛函理论(DFT)计算研究了Sn4Sb3的电子结构。尽管具有层状结构,但 Sn4Sb3 的能带结构显示出强烈的 k z 依赖性,从而形成了一个三维费米面。电子带在大多数 k z 平面上呈现三折对称性,而在Γ和 Z 平面上呈现六折对称性。这些观察结果与 DFT 计算结果一致,只是在费米水平以下 500 meV 存在额外的扁平带。光子能量依赖性测量结果表明,在其中一个分裂分支中存在明显的 k z 弥散,这表明该特征起源于体态,而在另一个分支中 k z 弥散可以忽略不计,这意味着该状态起源于表面。
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Three-dimensional electronic structure of the superconductor Sn4Sb3 by angle-resolved photoemission spectroscopy
The layered material Sn4Sb3 exhibits superconductivity with T c∽1.47 K and is proposed to be a topological superconductor candidate. In this study, we investigate the electronic structure of Sn4Sb3 using angle-resolved photoemission spectroscopy and density functional theory (DFT) calculations. Despite its layered structure, the band structure of Sn4Sb3 shows strong k z dependence, leading to the formation of a three-dimensional Fermi surface. The electronic bands exhibit three-fold symmetry at most k z planes and six-fold symmetry at the Γ and Z planes. These observations are consistent with DFT calculations, except for the presence of additional flat-like bands located 500 meV below the Fermi level. The photon energy dependence measurement show noticeable k z dispersion in one of the splitted branches, suggesting a bulk origin of the feature, and negligible k z dispersion in another branch, implying the surface origin of the state.
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
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