铌酸锂带电畴壁的电物理特性、忆阻性和阻性开关

A. Kislyuk, I. Kubasov, A. A. Temirov, A. Turutin, A. Shportenko, Viktor V. Kuts, M. D. Malinkovich
{"title":"铌酸锂带电畴壁的电物理特性、忆阻性和阻性开关","authors":"A. Kislyuk, I. Kubasov, A. A. Temirov, A. Turutin, A. Shportenko, Viktor V. Kuts, M. D. Malinkovich","doi":"10.3897/j.moem.9.4.116646","DOIUrl":null,"url":null,"abstract":"Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"9 25","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate\",\"authors\":\"A. Kislyuk, I. Kubasov, A. A. Temirov, A. Turutin, A. Shportenko, Viktor V. Kuts, M. D. Malinkovich\",\"doi\":\"10.3897/j.moem.9.4.116646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed.\",\"PeriodicalId\":18610,\"journal\":{\"name\":\"Modern Electronic Materials\",\"volume\":\"9 25\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modern Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3897/j.moem.9.4.116646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3897/j.moem.9.4.116646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

铁电材料中的带电畴壁(CDWs)因其不同于块体材料的电物理性质而引起了基础研究和实际应用的兴趣。从微观结构层面来看,铁电材料中的带电畴壁是一种二维缺陷,它将具有不同自发极化矢量方向的区域分隔开来。移动载流子对 CDW 束缚离子电荷的电场屏蔽导致在初始介电材料中形成具有较高电导率的细长窄通道。通过控制 CDW 相对于自发极化方向的位置和倾角,可以在很大范围内改变其电导率,从而为开发包括神经形态系统在内的存储器件提供了良好的机会。本综述介绍了在单晶单轴铁电体铌酸锂(LiNbO3,LN)中形成和应用 CDWs 作为电阻和记忆开关器件的最新技术。本文介绍了在单晶和薄膜铌酸锂中形成 CDWs 的主要方法,并提供了有关 CDWs 电物理特性和电导率控制方法的最新数据。还讨论了 CDWs 在电阻式和忆阻式开关存储器件中的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate
Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
0.60
自引率
0.00%
发文量
0
期刊最新文献
Synaptic behavior of a composite multiferroic heterostructure FeBSiC – PZT at resonant excitation Optically transparent highly conductive contact based on ITO and copper metallization for solar cells Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate Crystalline structure of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions in the vicinity of the morphotropic phase boundary Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1