7AGNR 中的 B 和 N 置换共掺杂

IF 2.9 Q3 CHEMISTRY, PHYSICAL Electronic Structure Pub Date : 2023-12-14 DOI:10.1088/2516-1075/ad159f
Rodrigo E. Menchón, Iñigo Delgado Enales, D. Sánchez-Portal, A. Garcia-Lekue
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引用次数: 0

摘要

石墨烯纳米带(GNR)的表面合成可以对其电子和磁性能进行工程设计,而这些性能敏感地取决于其精确的键合结构、形态和化学成分。在此,我们对氮和硼的共掺杂进行了研究,以更好地了解在 7AGNRs 主干上的位点同时进行化学置换的影响。在与原始体系的对比分析中,我们探讨了硝基硼烷基化体系所表现出的杂质带的来源。此外,我们还研究了电偶极矩的出现、其背后的电荷转移机制及其与 BN 中心间距的关系。我们还研究了高缺陷浓度极限和稀释极限,以及具有四个置换掺杂位点的各种掺杂方案和这些体系中可能出现的磁性。
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B and N substitutional co-doping in 7AGNRs
On-surface synthesis of graphene nanoribbons (GNRs) enables engineering their electronic and magnetic properties, which sensitively depend on their precise bonding structure, morphology and chemical composition. Here, we investigate nitrogen and boron co-doping in order to better understand the effects of simultaneous chemical substitution in sites along the backbone of 7AGNRs. In a comparative analysis with the pristine system, the origin of the impurity bands that nitro-borylated systems exhibit was addresed. In addition to this, we studied the appearance of an electric dipolar moment, the charge transfer mechanism behind it and its dependence on the distance between BN centres. The high defect concentration limit and the dilute limit were investigated, along with various doping schemes with four substitutional doping sites and the possible emergence of magnetism in these systems.
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
期刊最新文献
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