Wenyi Yang, Xiaobin Zhang, Zimin Chen, Lin Zhu, Xuezhen Liu, Jianqing Liu, Gang Wang
{"title":"利用 GaInAs/GaAsP 量子阱改善 GaInP/GaInAs/Ge 三结太阳能电池的抗辐射性能","authors":"Wenyi Yang, Xiaobin Zhang, Zimin Chen, Lin Zhu, Xuezhen Liu, Jianqing Liu, Gang Wang","doi":"10.35848/1347-4065/ad0cda","DOIUrl":null,"url":null,"abstract":"Introducing quantum wells (QWs) into a GaAs solar cell can expand its spectral response range to raise the short-circuit current (<italic toggle=\"yes\">J</italic>\n<sub>sc</sub>). GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in a GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of the TJ cell increases from 30% to 32% by inserting 30 period QWs. Under the electron irradiation condition of 1 MeV, 1 × 10<sup>15 </sup>cm<sup>−2</sup>, the radiation resistance of quantum well solar cells (QWSCs) is worse than that of the reference cell without QWs. The effect of QW doping on the radiation resistance of the 30 QWSC has been studied. After irradiation, the radiation resistance of <italic toggle=\"yes\">J</italic>\n<sub>sc</sub> is improved by the unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is attained and this indicates that the QWSC has expectable potential to be applied to satellites.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells\",\"authors\":\"Wenyi Yang, Xiaobin Zhang, Zimin Chen, Lin Zhu, Xuezhen Liu, Jianqing Liu, Gang Wang\",\"doi\":\"10.35848/1347-4065/ad0cda\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Introducing quantum wells (QWs) into a GaAs solar cell can expand its spectral response range to raise the short-circuit current (<italic toggle=\\\"yes\\\">J</italic>\\n<sub>sc</sub>). GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in a GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of the TJ cell increases from 30% to 32% by inserting 30 period QWs. Under the electron irradiation condition of 1 MeV, 1 × 10<sup>15 </sup>cm<sup>−2</sup>, the radiation resistance of quantum well solar cells (QWSCs) is worse than that of the reference cell without QWs. The effect of QW doping on the radiation resistance of the 30 QWSC has been studied. After irradiation, the radiation resistance of <italic toggle=\\\"yes\\\">J</italic>\\n<sub>sc</sub> is improved by the unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is attained and this indicates that the QWSC has expectable potential to be applied to satellites.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2023-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad0cda\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad0cda","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells
Introducing quantum wells (QWs) into a GaAs solar cell can expand its spectral response range to raise the short-circuit current (Jsc). GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in a GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of the TJ cell increases from 30% to 32% by inserting 30 period QWs. Under the electron irradiation condition of 1 MeV, 1 × 1015 cm−2, the radiation resistance of quantum well solar cells (QWSCs) is worse than that of the reference cell without QWs. The effect of QW doping on the radiation resistance of the 30 QWSC has been studied. After irradiation, the radiation resistance of Jsc is improved by the unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is attained and this indicates that the QWSC has expectable potential to be applied to satellites.
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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