时空演变及其对大气 TEOS/O2/Ar 等离子体沉积行为的影响:数值研究

IF 2.9 3区 物理与天体物理 Q2 PHYSICS, APPLIED Plasma Processes and Polymers Pub Date : 2023-12-26 DOI:10.1002/ppap.202300172
Jiaxin Chang, Dong Dai, Cheng Zhang, Tao Shao
{"title":"时空演变及其对大气 TEOS/O2/Ar 等离子体沉积行为的影响:数值研究","authors":"Jiaxin Chang, Dong Dai, Cheng Zhang, Tao Shao","doi":"10.1002/ppap.202300172","DOIUrl":null,"url":null,"abstract":"Atmospheric dielectric barrier discharge (DBD) is a promising approach for large-area deposition, whose spatiotemporal evolution determines the deposition rate and film chemistry. To investigate the relationship between the discharge and deposition behavior of tetraethoxysilane/oxygen/argon (TEOS/<math altimg=\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0001\" location=\"graphic/ppap202300172-math-0001.png\">\n<semantics>\n<mrow>\n<msub>\n<mi mathvariant=\"normal\">O</mi>\n<mn>2</mn>\n</msub>\n</mrow>\n${\\text{O}}_{2}$</annotation>\n</semantics></math>/Ar) DBD, a one-dimensional (1D) fluid model was constructed and experimentally verified. The calculation results reveal that TEOS mainly affects the discharge behavior via Penning ionization, while <math altimg=\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0002\" location=\"graphic/ppap202300172-math-0002.png\">\n<semantics>\n<mrow>\n<msub>\n<mi mathvariant=\"normal\">O</mi>\n<mn>2</mn>\n</msub>\n</mrow>\n${\\text{O}}_{2}$</annotation>\n</semantics></math> mainly affects discharge via attachment reaction. Penning ionization reduces the excited Ar and the attachment reaction reduces the number of discharges in half voltage cycles. As a result, merely increasing the concentration of TEOS or <math altimg=\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0003\" location=\"graphic/ppap202300172-math-0003.png\">\n<semantics>\n<mrow>\n<msub>\n<mi mathvariant=\"normal\">O</mi>\n<mn>2</mn>\n</msub>\n</mrow>\n${\\text{O}}_{2}$</annotation>\n</semantics></math> may not proportionally increase the deposition rate of relevant reactive species.","PeriodicalId":20135,"journal":{"name":"Plasma Processes and Polymers","volume":"47 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatiotemporal evolution and its impact on the deposition behavior of atmospheric TEOS/O2/Ar plasma: A numerical study\",\"authors\":\"Jiaxin Chang, Dong Dai, Cheng Zhang, Tao Shao\",\"doi\":\"10.1002/ppap.202300172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atmospheric dielectric barrier discharge (DBD) is a promising approach for large-area deposition, whose spatiotemporal evolution determines the deposition rate and film chemistry. To investigate the relationship between the discharge and deposition behavior of tetraethoxysilane/oxygen/argon (TEOS/<math altimg=\\\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0001\\\" location=\\\"graphic/ppap202300172-math-0001.png\\\">\\n<semantics>\\n<mrow>\\n<msub>\\n<mi mathvariant=\\\"normal\\\">O</mi>\\n<mn>2</mn>\\n</msub>\\n</mrow>\\n${\\\\text{O}}_{2}$</annotation>\\n</semantics></math>/Ar) DBD, a one-dimensional (1D) fluid model was constructed and experimentally verified. The calculation results reveal that TEOS mainly affects the discharge behavior via Penning ionization, while <math altimg=\\\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0002\\\" location=\\\"graphic/ppap202300172-math-0002.png\\\">\\n<semantics>\\n<mrow>\\n<msub>\\n<mi mathvariant=\\\"normal\\\">O</mi>\\n<mn>2</mn>\\n</msub>\\n</mrow>\\n${\\\\text{O}}_{2}$</annotation>\\n</semantics></math> mainly affects discharge via attachment reaction. Penning ionization reduces the excited Ar and the attachment reaction reduces the number of discharges in half voltage cycles. As a result, merely increasing the concentration of TEOS or <math altimg=\\\"urn:x-wiley:16128850:media:ppap202300172:ppap202300172-math-0003\\\" location=\\\"graphic/ppap202300172-math-0003.png\\\">\\n<semantics>\\n<mrow>\\n<msub>\\n<mi mathvariant=\\\"normal\\\">O</mi>\\n<mn>2</mn>\\n</msub>\\n</mrow>\\n${\\\\text{O}}_{2}$</annotation>\\n</semantics></math> may not proportionally increase the deposition rate of relevant reactive species.\",\"PeriodicalId\":20135,\"journal\":{\"name\":\"Plasma Processes and Polymers\",\"volume\":\"47 1\",\"pages\":\"\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2023-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasma Processes and Polymers\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/ppap.202300172\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasma Processes and Polymers","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/ppap.202300172","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

大气介质阻挡放电(DBD)是一种很有前景的大面积沉积方法,其时空演变决定了沉积速率和薄膜化学性质。为了研究四乙氧基硅烷/氧/氩(TEOS/O2${\text{O}}_{2}$/Ar)DBD 的放电和沉积行为之间的关系,我们构建了一个一维(1D)流体模型,并进行了实验验证。计算结果表明,TEOS 主要通过潘宁电离影响放电行为,而 O2${text{O}}_{2}$ 主要通过附着反应影响放电。潘宁电离减少了激发 Ar,而附着反应则减少了半电压周期内的放电次数。因此,仅仅增加 TEOS 或 O2${text{O}}_{2}$ 的浓度可能无法成比例地提高相关活性物种的沉积速率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Spatiotemporal evolution and its impact on the deposition behavior of atmospheric TEOS/O2/Ar plasma: A numerical study
Atmospheric dielectric barrier discharge (DBD) is a promising approach for large-area deposition, whose spatiotemporal evolution determines the deposition rate and film chemistry. To investigate the relationship between the discharge and deposition behavior of tetraethoxysilane/oxygen/argon (TEOS/ O 2 ${\text{O}}_{2}$ /Ar) DBD, a one-dimensional (1D) fluid model was constructed and experimentally verified. The calculation results reveal that TEOS mainly affects the discharge behavior via Penning ionization, while O 2 ${\text{O}}_{2}$ mainly affects discharge via attachment reaction. Penning ionization reduces the excited Ar and the attachment reaction reduces the number of discharges in half voltage cycles. As a result, merely increasing the concentration of TEOS or O 2 ${\text{O}}_{2}$ may not proportionally increase the deposition rate of relevant reactive species.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Plasma Processes and Polymers
Plasma Processes and Polymers 物理-高分子科学
CiteScore
6.60
自引率
11.40%
发文量
150
审稿时长
3 months
期刊介绍: Plasma Processes & Polymers focuses on the interdisciplinary field of low temperature plasma science, covering both experimental and theoretical aspects of fundamental and applied research in materials science, physics, chemistry and engineering in the area of plasma sources and plasma-based treatments.
期刊最新文献
Electrophoretic Deposition of Multi‐Walled Carbon Nanotubes: The Key Role of Plasma Functionalization and Polymerization Issue Information: Plasma Process. Polym. 9/2024 Outside Front Cover: Plasma Process. Polym. 9/2024 Effect of the pH on the Formation of Gold Nanoparticles Enabled by Plasma‐Driven Solution Electrochemistry Effects of cold atmospheric plasma‐treated medium on HaCaT and HUVEC cells in vitro
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1