导热结构对集成式无空腔微型热电发电机发电性能的影响

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2023-12-28 DOI:10.35848/1347-4065/ad193b
Keita Kuga, Md Mehdee Hasan Mahfuz, Takeo Matsuki, Takanobu Watanabe
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引用次数: 0

摘要

本研究调查了由硅纳米线(Si-NWs)组成的无空腔微型热电发生器(TEG)的性能。在无空腔结构中,TEG 的一侧通过称为热导(HG)的金属覆盖层结构加热,从而有选择性地向器件内的特定微区提供热量。因此,热能沿垂直方向流动,在 NW 中形成陡峭的温度梯度。然而,不同厚度的 HG 可以改变器件的性能。在这项工作中,实验证明了集成 TEG 的 HG 结构对发电性能的影响。金属 HG 厚度越高,层间介质(ILD)厚度越厚,集成器件的发电性能就越高。
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Impact of heat guide structure on the power generation performance of integrated cavity-free micro thermoelectric generators
The performance of a cavity-free micro thermoelectric generator (TEG) consists of Si nanowires (Si-NWs) has been investigated in this research. In the cavity free structure, one side of TEG is heated by the structure of metal overlayer, called Heat Guide (HG), to supply heat selectively to specific microregions within the device. Thus, heat energy flows in the perpendicular direction which forms steep temperature gradient in the NWs. However, the performance can be varied with the various thickness of HG. In this work, the impact of HG structure of an integrated TEG was experimentally demonstrated on the power generation performance. Higher metal HG thickness and thick interlayer dielectric (ILD) thickness exhibit higher power generation performance with the integrated device.
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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