基于 PtSe2/MoSe2 范德华异质结的高性能自供电光电探测器

Chaoyi Zhang, Silu Peng, Jiayue Han, Chunyu Li, Hongxi Zhou, Yadong Jiang, Jun Wang
{"title":"基于 PtSe2/MoSe2 范德华异质结的高性能自供电光电探测器","authors":"Chaoyi Zhang, Silu Peng, Jiayue Han, Chunyu Li, Hongxi Zhou, Yadong Jiang, Jun Wang","doi":"10.1117/12.3007206","DOIUrl":null,"url":null,"abstract":"Due to the increasing demand for miniaturization and portability, the development of self-powered photodetectors that can work without external power supply has aroused great interest among researchers. As a group-10 layered transitional metal dichalcogenides, PtSe2 exhibits potential applications in photoelectric detection because of the unique properties such as high carrier mobility, tunable bandgap, and stability. However, its inherent large dark current hinders the further improvement of the performance of the PtSe2 photodetectors. In this paper, we fabricated a vertically aligned Two-dimensional (2D) van der Waals (vdWs) heterojunction composed of PtSe2 and MoSe2, which exhibits high sensitivity photoelectric detection performance in a wide band from visible light (405 nm) to near-infrared (1550 nm) without external bias. As a result, working in self-driving mode at room temperature, the responsivity and detectivity can reach 22.95 A W-1 and 9.27×1011 Jones with a fast response speed of 180/48 μs. This work is expected to provide a new idea for broadband, energy-efficient and high-performance miniaturized detectors.","PeriodicalId":502341,"journal":{"name":"Applied Optics and Photonics China","volume":"24 4","pages":"129630P - 129630P-11"},"PeriodicalIF":0.0000,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-powered photodetector with high performance based on PtSe2/MoSe2 van der Waals heterojunction\",\"authors\":\"Chaoyi Zhang, Silu Peng, Jiayue Han, Chunyu Li, Hongxi Zhou, Yadong Jiang, Jun Wang\",\"doi\":\"10.1117/12.3007206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the increasing demand for miniaturization and portability, the development of self-powered photodetectors that can work without external power supply has aroused great interest among researchers. As a group-10 layered transitional metal dichalcogenides, PtSe2 exhibits potential applications in photoelectric detection because of the unique properties such as high carrier mobility, tunable bandgap, and stability. However, its inherent large dark current hinders the further improvement of the performance of the PtSe2 photodetectors. In this paper, we fabricated a vertically aligned Two-dimensional (2D) van der Waals (vdWs) heterojunction composed of PtSe2 and MoSe2, which exhibits high sensitivity photoelectric detection performance in a wide band from visible light (405 nm) to near-infrared (1550 nm) without external bias. As a result, working in self-driving mode at room temperature, the responsivity and detectivity can reach 22.95 A W-1 and 9.27×1011 Jones with a fast response speed of 180/48 μs. This work is expected to provide a new idea for broadband, energy-efficient and high-performance miniaturized detectors.\",\"PeriodicalId\":502341,\"journal\":{\"name\":\"Applied Optics and Photonics China\",\"volume\":\"24 4\",\"pages\":\"129630P - 129630P-11\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Optics and Photonics China\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.3007206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Optics and Photonics China","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.3007206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

由于对微型化和便携性的要求越来越高,开发无需外部电源即可工作的自供电光电探测器引起了研究人员的极大兴趣。作为一种 10 族层状过渡金属二钙化物,PtSe2 具有载流子迁移率高、带隙可调、稳定性好等独特性能,因此在光电检测领域具有潜在的应用前景。然而,其固有的大暗电流阻碍了 PtSe2 光电探测器性能的进一步提高。在本文中,我们制备了一种由 PtSe2 和 MoSe2 组成的垂直排列二维范德华(vdWs)异质结,它在从可见光(405 nm)到近红外(1550 nm)的宽波段内无需外部偏压即可表现出高灵敏度的光电检测性能。因此,在室温下以自驱动模式工作时,其响应率和探测率可分别达到 22.95 A W-1 和 9.27×1011 Jones,响应速度为 180/48 μs。这项工作有望为宽带、高能效和高性能微型探测器提供一个新思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Self-powered photodetector with high performance based on PtSe2/MoSe2 van der Waals heterojunction
Due to the increasing demand for miniaturization and portability, the development of self-powered photodetectors that can work without external power supply has aroused great interest among researchers. As a group-10 layered transitional metal dichalcogenides, PtSe2 exhibits potential applications in photoelectric detection because of the unique properties such as high carrier mobility, tunable bandgap, and stability. However, its inherent large dark current hinders the further improvement of the performance of the PtSe2 photodetectors. In this paper, we fabricated a vertically aligned Two-dimensional (2D) van der Waals (vdWs) heterojunction composed of PtSe2 and MoSe2, which exhibits high sensitivity photoelectric detection performance in a wide band from visible light (405 nm) to near-infrared (1550 nm) without external bias. As a result, working in self-driving mode at room temperature, the responsivity and detectivity can reach 22.95 A W-1 and 9.27×1011 Jones with a fast response speed of 180/48 μs. This work is expected to provide a new idea for broadband, energy-efficient and high-performance miniaturized detectors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Identification of nuclear materials using portable laser-induced plasma spectroscopy 1319 nm single-frequency injection seeded Q-switched laser based on ramp-hold-fire Interference lithography based on a phase mask for the fabrication of diffraction gratings Busyness level-based deep reinforcement learning method for routing, modulation, and spectrum assignment of elastic optical networks Research on A/D driver circuit level nonuniformity correction technology based on machine learning
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1