{"title":"具有高光子探测概率的正面发光单光子雪崩二极管","authors":"Yihan Zhao, Yang Liu, Zhangming Zhu","doi":"10.1117/12.3006826","DOIUrl":null,"url":null,"abstract":"A frontside-illuminated single photon avalanche diode based on 110 nm CMOS process is proposed in this paper. The P-well/Deep N well multiplication junction is adopted to enhance the near infrared absorption. To reduce the dark count rate, only the well guard ring is used in the photosensitive region to avoid the defects caused by shallow trench isolation process. The SPAD achieves a DCR of 3.2 cps/μm2 at room temperature, a peak photon detection probability over 40% at 500 nm, and over 3.6% at 905 nm with 2.0 V excess bias voltage. The device we designed is very suitable for LiDAR applications.","PeriodicalId":502341,"journal":{"name":"Applied Optics and Photonics China","volume":"64 ","pages":"129661E - 129661E-6"},"PeriodicalIF":0.0000,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A frontside-illuminated single-photon avalanche diode with high photon detection probability\",\"authors\":\"Yihan Zhao, Yang Liu, Zhangming Zhu\",\"doi\":\"10.1117/12.3006826\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A frontside-illuminated single photon avalanche diode based on 110 nm CMOS process is proposed in this paper. The P-well/Deep N well multiplication junction is adopted to enhance the near infrared absorption. To reduce the dark count rate, only the well guard ring is used in the photosensitive region to avoid the defects caused by shallow trench isolation process. The SPAD achieves a DCR of 3.2 cps/μm2 at room temperature, a peak photon detection probability over 40% at 500 nm, and over 3.6% at 905 nm with 2.0 V excess bias voltage. The device we designed is very suitable for LiDAR applications.\",\"PeriodicalId\":502341,\"journal\":{\"name\":\"Applied Optics and Photonics China\",\"volume\":\"64 \",\"pages\":\"129661E - 129661E-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Optics and Photonics China\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.3006826\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Optics and Photonics China","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.3006826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A frontside-illuminated single-photon avalanche diode with high photon detection probability
A frontside-illuminated single photon avalanche diode based on 110 nm CMOS process is proposed in this paper. The P-well/Deep N well multiplication junction is adopted to enhance the near infrared absorption. To reduce the dark count rate, only the well guard ring is used in the photosensitive region to avoid the defects caused by shallow trench isolation process. The SPAD achieves a DCR of 3.2 cps/μm2 at room temperature, a peak photon detection probability over 40% at 500 nm, and over 3.6% at 905 nm with 2.0 V excess bias voltage. The device we designed is very suitable for LiDAR applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
