{"title":"在 SrRu1-xZrxO3 合金中实现铁磁半导体","authors":"Sheng Xu, Y. Gu, Jun Bian, Xiaoshan Wu","doi":"10.1051/epjap/2023230120","DOIUrl":null,"url":null,"abstract":"Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Realizing ferromagnetic semiconductors in SrRu1-xZrxO3 alloys\",\"authors\":\"Sheng Xu, Y. Gu, Jun Bian, Xiaoshan Wu\",\"doi\":\"10.1051/epjap/2023230120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.\",\"PeriodicalId\":301303,\"journal\":{\"name\":\"The European Physical Journal Applied Physics\",\"volume\":\"8 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The European Physical Journal Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/epjap/2023230120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/epjap/2023230120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
通过第一原理计算,我们研究了 SrRu1-xZrxO3 (0 ≤ x ≤ 1)的结构、电和磁特性。自旋极化计算表明,SrRu1-xZrxO3 在 x = 0 时是铁磁性金属,在 x = 0.125 和 0.25 时是铁磁性半导体,在 x = 0.5 时是反铁磁性半导体,在 x = 1 时是非磁性绝缘体,这与现有实验结果一致。随着 Zr 含量的增加,SrRu1-xZrxO3 的晶格参数和带隙增大,而反铁磁态和铁磁态之间的能量差减小。通过 Ru-O 和 Zr-O 键,费米水平附近的 Ru 4d 和 Zr 4d 态之间的杂化变得很强。因此,Ru 4d 态分裂,然后在 x = 0.125 处由于掺杂 Zr 而发生金属-绝缘体转变。在掺杂 Zr 的 SrRuO3 中首次预言了铁磁半导体,这可能会在自旋电子器件中得到潜在的应用。
Realizing ferromagnetic semiconductors in SrRu1-xZrxO3 alloys
Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.