高功率脉冲磁控溅射过程中电压、脉冲长度和反向极化脉冲对氩金等离子体的影响

Plasma Pub Date : 2023-11-20 DOI:10.3390/plasma6040047
Jürgen Guljakow, Walter Lang
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引用次数: 0

摘要

这项研究旨在提供有关通过双极高功率脉冲磁控溅射(HIPIMS)沉积金的信息,以确定合适的工艺参数。在双极高功率脉冲磁控溅射沉积过程中,通过光学发射光谱(OES)和示波器分析了电压、脉冲长度和踢脉冲对氩金等离子体的影响。电压在 700 V 和 1000 V 之间变化,脉冲长度在 20 µs 和 100 µs 之间变化,并观察了一次有踢脉冲和一次无踢脉冲的过程。电压对等离子体的影响比脉冲宽度的影响更为明显。虽然随着电压的增加,几条 Au I 线的强度增加了 13 倍,但脉冲长度的变化只能使 Au I 的亮度随时间呈线性增加。受激氩的强度受电压变化的影响很小,但随着脉冲长度的增加,受激氩的强度会跟随放电电流的变化而变化。与激发氩相反,电离氩的发射强度几乎随电压和脉冲长度呈线性增长。从光谱中可以看出,反向极化脉冲主要影响等离子体中的激发氩原子,而对电离氩的影响并不明显。与激发的氩原子不同,激发的金原子似乎完全不受踢脉冲的影响。没有观察到金的电离现象。在脉冲期间,等离子体发生了强烈的稀释。在沉积金层时,最好使用小于 50 µs 的极短脉冲和大约 1000 V 的高电压。本文全面概述了 HIPIMS 过程中的金光谱,并利用光发射光谱作为一种简单的测量方法,对双极过程中的反向极化脉冲进行评估。该工艺的未来用途可能包括聚合物的金属化。
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Influence of Voltage, Pulselength and Presence of a Reverse Polarized Pulse on an Argon–Gold Plasma during a High-Power Impulse Magnetron Sputtering Process
This work aims to provide information about the deposition of gold via bipolar high-power impulse magnetron sputtering (HIPIMS) in order to identify suitable process parameters. The influences of voltage, pulse length and the kick-pulse on an argon–gold plasma during a bipolar high-power impulse magnetron sputtering deposition process were analysed via optical emission spectroscopy (OES) and oscilloscope. The voltage was varied between 700 V and 1000 V, the pulse length was varied between 20 µs and 100 µs and the process was observed once with kick-pulse and once without. The influence of the voltage on the plasma was more pronounced than the influence of the pulse width. While the intensity of several Au I lines increased up to 13-fold with increasing voltages, only a less-than linear increase in Au I brightness with time could be identified for changes in pulse length. The intensity of excited argon is only minimally affected by changes in voltages, but follows the evolution of the discharge current, with increasing pulse lengths. Contrary to the excited argon, the intensity emitted by ionized argon grows nearly linearly with voltage and pulse length. The reverse polarised pulse mainly affects the excited argon atoms in the plasma, while the influence on the ionized argon is less pronounced, as can be seen in the the spectra. Unlike the excited argon atoms, the excited gold atoms appear to be completely unaffected by the kick-pulse. No ionization of gold was observed. During the pulse, a strong rarefaction of plasma takes place. Very short pulses of less than 50 µs and high voltages of about 1000 V are to be preferred for the deposition of gold layers. This paper offers a comprehensive overview of the gold spectrum during a HIPIMS process and makes use of optical emission spectroscopy as a simple measuring approach for evaluation of the reverse polarized pulse during a bipolar process. Future uses of the process may include the metallization of polymers.
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