利用 SCAPS 对不同缓冲层的硫化锡基太阳能电池进行数值优化

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.837
T. A. Chowdhury, S.M.T. Hossain, M.K. Anna, S.A. Ritu, S.F. Nuri
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引用次数: 0

摘要

由于硫化锡(SnS)具有出色的半导体特性,研究人员正在对其太阳能电池进行深入研究。在这项工作中,太阳能电池电容模拟器(SCAPS-1D)被用来对使用硫化锡吸收层和不同缓冲层(ZnO、ZnSe、CdZnS、TiO2)的薄膜太阳能电池进行模拟研究,并与有毒的 CdS 缓冲层进行比较。评估了光伏参数(开路电压、填充因子、短路电流密度和效率)与吸收层厚度、不同缓冲层和缓冲层厚度的函数关系。此外,还评估了器件在不同工作温度下的稳定性。模拟结果揭示了基于 SnS 的高效太阳能电池的制造过程。
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Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS
Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of their outstanding semiconducting features. In this work, the solar cell capacitance simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO2) in comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) is evaluated as a function of absorber layer thickness, different buffer layer and buffer layer thickness. Device stability at different operating temperature is also evaluated. The simulation results reveal the fabrication of high efficiency SnS based solar cells.
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
期刊最新文献
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