利用可重新配置的低噪声放大器设计纳米电子传感器的电流再利用架构和预失真技术

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-10-01 DOI:10.1166/jno.2023.3491
K. Suganthi, S. Kayalvizhi, K. Ferents Koni Jiavana, S. Malarvizhi
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引用次数: 0

摘要

本研究介绍了可重构 CMOS 低噪声放大器(LNA)拓扑结构的设计,以实现纳米传感器应用可接受的线性度、增益和低噪声。在采用预失真和电流再利用技术时,考虑了 2.4 GHz、5 GHz 和 28 GHz 的频段。毫米波(MMW)频段包括出色的阻抗匹配、端口间良好的隔离、低噪声数据和显著增益。所设计的可重新配置结构在 2.4 GHz 频率时增益适中,NF 低至 2.6 dB,在 5 GHz 频率时小于 2 dB,在 28 GHz 频率时超过 10 dB。放大器的稳定性大于 1 dB,芯片尺寸为 0.5×0.2 平方毫米,功率增加适中,因此适合制作纳米传感器。
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Current Re-Use Architecture and Pre-Distortion Technique Employing Re-Configurable Low Noise Amplifier for the Design of Nano-Electronic Sensors
This study presents the design of reconfigurable CMOS Low Noise Amplifier (LNA) topologies to achieve acceptable linearity, gain, and low noise for Nano-sensor applications. The frequency bands at 2.4 GHz, 5 GHz and 28 GHz are taken into consideration for employing the Pre-distortion and current reuse technique. Millimeter Wave (MMW) frequency bands include excellent impedance matching, good isolation between the ports, To improve the futuristic applications of RADAR sensors, low noise figures and significant gain are preferred. The designed re-configurable structure achieved At 2.4 GHz, the gain is modest with a low NF of 2.6 dB, less than 2 dB at 5 GHz, and more than 10 dB at 28 GHz frequencies. The Stability of the amplifier greater than 1 dB, The arrangement of the layout with a chip measuring 0.5×0.2 mm2 and a moderate power increase make it appropriate for nanosensor creation.
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来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
期刊最新文献
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