Arindam Bala, Mayuri Sritharan, Na Liu, Muhammad Naqi, Anamika Sen, Gyuchull Han, Hyun Yeol Rho, Youngki Yoon, Sunkook Kim
{"title":"使用大面积双层 WS2 的双视觉主动像素图像传感器阵列","authors":"Arindam Bala, Mayuri Sritharan, Na Liu, Muhammad Naqi, Anamika Sen, Gyuchull Han, Hyun Yeol Rho, Youngki Yoon, Sunkook Kim","doi":"10.1002/inf2.12513","DOIUrl":null,"url":null,"abstract":"<p>Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate sensors for different lighting conditions, TMDs can absorb light across a broad-spectrum range. In this study, a dual vision active pixel image sensor array based on bilayer WS<sub>2</sub> phototransistors was implemented. The bilayer WS<sub>2</sub> film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition. The WS<sub>2</sub>-based thin-film transistors (TFTs) exhibit high average mobility, excellent <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>, and uniform electrical properties. The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W<sup>−1</sup> (at a wavelength of 405 nm) owing to the photogating effect. Finally, red, green, blue, and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated. The proposed image sensor array utilizing WS<sub>2</sub> phototransistors has the potential to revolutionize the field of vision sensing, which could lead to a range of new opportunities in various applications, including night vision, pedestrian detection, various surveillance, and security systems.\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":null,"pages":null},"PeriodicalIF":22.7000,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12513","citationCount":"0","resultStr":"{\"title\":\"Active pixel image sensor array for dual vision using large-area bilayer WS2\",\"authors\":\"Arindam Bala, Mayuri Sritharan, Na Liu, Muhammad Naqi, Anamika Sen, Gyuchull Han, Hyun Yeol Rho, Youngki Yoon, Sunkook Kim\",\"doi\":\"10.1002/inf2.12513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate sensors for different lighting conditions, TMDs can absorb light across a broad-spectrum range. In this study, a dual vision active pixel image sensor array based on bilayer WS<sub>2</sub> phototransistors was implemented. The bilayer WS<sub>2</sub> film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition. The WS<sub>2</sub>-based thin-film transistors (TFTs) exhibit high average mobility, excellent <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>, and uniform electrical properties. The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W<sup>−1</sup> (at a wavelength of 405 nm) owing to the photogating effect. Finally, red, green, blue, and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated. The proposed image sensor array utilizing WS<sub>2</sub> phototransistors has the potential to revolutionize the field of vision sensing, which could lead to a range of new opportunities in various applications, including night vision, pedestrian detection, various surveillance, and security systems.\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":48538,\"journal\":{\"name\":\"Infomat\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":22.7000,\"publicationDate\":\"2024-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12513\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infomat\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/inf2.12513\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infomat","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/inf2.12513","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Active pixel image sensor array for dual vision using large-area bilayer WS2
Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate sensors for different lighting conditions, TMDs can absorb light across a broad-spectrum range. In this study, a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented. The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition. The WS2-based thin-film transistors (TFTs) exhibit high average mobility, excellent Ion/Ioff, and uniform electrical properties. The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W−1 (at a wavelength of 405 nm) owing to the photogating effect. Finally, red, green, blue, and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated. The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing, which could lead to a range of new opportunities in various applications, including night vision, pedestrian detection, various surveillance, and security systems.
期刊介绍:
InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.