Wenhao Xian, Baoguo Zhang, Min Liu, P. Wu, Ye Wang, Shitong Liu, Dexing Cui
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引用次数: 0
摘要
随着移动通信和新能源技术的不断进步,市场对高频和大功率半导体器件的兴趣日益高涨。氮化镓(GaN)作为一种宽带隙半导体材料,已成为相关领域的热门研究领域。足够平整的材料表面能显著提高器件的性能。因此,本文探讨了氧化剂在化学机械抛光(CMP)过程中对氮化镓表面质量的影响。采用原子力显微镜 (AFM) 在每次 CMP 实验后检查 GaN 的表面形态。目的是评估特定浆料成分对 GaN 表面质量的影响。结果显示,氧化剂,尤其是强氧化剂过硫酸钾(K2S2O8)的引入有利于降低表面粗糙度 Sq,从而提高 GaN 的表面质量。使用最佳成分进行 CMP 处理后,氮化镓的表面粗糙度(Sq)从 7.7 纳米降至 0.78 纳米。对 GaN 表面 1 μm2 范围内的不同区域进行了原子力显微镜测试,结果表明可以获得清晰的 GaN 原子阶图像,Sq 可低至 0.26 nm。
Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques
With the ongoing progress of mobile communications and new energy technologies, the market interest in high-frequency and high-power semiconductor devices has risen. Gallium nitride (GaN), a wide bandgap semiconductor material, has become a popular area of research in relevant fields. A sufficiently flat material surface can significantly enhance the device's performance. Therefore, this paper explores the effect of oxidants on the quality of GaN surface during chemical mechanical polishing (CMP). Atomic force microscopy (AFM) was employed to examine the surface morphology of GaN after each CMP experiment. The aim was to evaluate the effect of specific slurry components on GaN surface quality. The results revealed that the introduction of oxidizers, particularly the potent oxidizer potassium persulfate (K2S2O8), was advantageous in reducing the surface roughness Sq and thus, enhancing the surface quality of GaN. The surface roughness (Sq) of GaN was reduced from 7.7 to 0.78 nm after the CMP process with the optimal components. AFM tests were conducted on different areas of the GaN surface within a range of 1 μm2, which revealed that clear images of the GaN atomic steps can be obtained, and the Sq can reach as low as 0.26 nm.