Ryosuke Okuyama, T. Kadono, Ayumi Onaka-Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita
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引用次数: 0
摘要
降低二氧化硅/硅界面区的二氧化硅/硅界面态密度(Dit)对于提高互补金属氧化物半导体(CMOS)图像传感器的性能非常重要。CH3O 离子注入区可储存氢气,并在随后的热处理过程中释放出所储存的氢气。本研究通过准静态电容-电压测量和电子自旋共振测量分别分析表明,CH3O 离子注入外延硅晶片可降低二氧化硅/硅界面区的 Dit 和 Pb0 中心密度。随着热处理温度的升高,CH3O 植入晶片中的 Dit 和 Pb0 中心密度都有所下降。此外,CH3O 离子注入晶片诱导的氢终止反应的活化能估计为 1.57 eV。该活化能与二氧化硅/硅界面上氢分子和硅悬键的活化能接近。CH3O分子离子植入外延硅片的终止效应有助于提高CMOS图像传感器的电气性能。
Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors
The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important for improving the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit and Pb0 center density in SiO2/Si interface regions, as analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. Both Dit and Pb0 center density in the CH3O-implanted wafer decreased with increasing heat treatment temperature. Moreover, the activation energy is estimated to be 1.57 eV for the hydrogen termination reactions induced by the CH3O-ion-implanted wafer. The activation energy is close to those of hydrogen molecules and Si dangling bonds at the SiO2/Si interface. The termination effect of the CH3O-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.