{"title":"嵌入高 K 柱的新型分裂栅沟槽 MOSFET，可实现更高的击穿电压","authors":"Li Huang, Xiaojin Li, Yabin Sun, Yanling Shi","doi":"10.1088/1361-6641/ad1c62","DOIUrl":null,"url":null,"abstract":"\n In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"61 4","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage\",\"authors\":\"Li Huang, Xiaojin Li, Yabin Sun, Yanling Shi\",\"doi\":\"10.1088/1361-6641/ad1c62\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"61 4\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad1c62\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad1c62","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage
In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.
期刊介绍：
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.
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