Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties

Laser doping of n-type 4H-silicon carbide (SiC) semiconductor substrates with boron (B) using a pulsed Nd:YAG laser (λ = 1064 nm) is reported. An aqueous boric acid solution was used as a boron precursor. A simple theoretical heat transfer model was employed to select the laser processing parameters, i.e., laser power and laser-substrate interaction time, and determine the appropriate temperature to dope 4H-SiC substrates. The selected processing parameters ensured that the temperature at the laser-substrate interaction zone was below the SiC peritectic temperature to prevent any crystalline phase transformations in SiC. Fourier-transform infrared spectrometry was conducted to determine the optical properties of both undoped and boron-doped 4H-SiC substrates within the mid-wave infrared (MWIR) wavelength range (3–5 μm). Boron atoms create an acceptor energy level at 0.29 eV above the valence band in the 4H-SiC bandgap, which corresponds to λ = 4.3 μm. Boron-doped 4H-SiC substrate exhibited reduced reflectance and increased absorptance for the MWIR range. An absorption peak at λ = 4.3 μm was detected for the doped substrate. This confirmed the creation of the acceptor energy level in the 4H-SiC bandgap and, thus, doping of 4H-SiC with boron. A notable decrease in the refractive index, i.e., from 2.87 to 2.52, after laser doping of n-type 4H-SiC with boron was achieved.