小角度极限下的扭曲 TMD:指数平坦带和琐碎带

Simon Becker, Mengxuan Yang
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引用次数: 0

摘要

最近的实验发现了扭曲双层 MoTe$_2$ [C23,Z23] 和 WSe$_2$ [MD23]在零磁场下的分数切尔诺绝缘体态。在这篇文章中,我们研究了扭曲过渡金属二卤化物(TMDs)的麦克唐纳哈密顿,并分析了 TMDs 在小扭曲角极限下的低电平谱。与扭曲的双层石墨烯哈密顿不同,我们发现 TMDs 并不表现出平坦带。在 TMD 中,小扭转角的平坦性是由于矩阵值电势的空间限制造成的。我们发现,通过将 Simon [Si83] 和 Helffer-Sj\"ostrand [HS84]开发的半经典技术推广到矩阵值电势,存在着更宽的模型参数范围,从而使低洼带在扭转角上的宽度呈指数级小,拓扑上是微不足道的,并服从具有明确参数的谐振子型间距。
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Twisted TMDs in the small-angle limit: exponentially flat and trivial bands
Recent experiments discovered fractional Chern insulator states at zero magnetic field in twisted bilayer MoTe$_2$ [C23,Z23] and WSe$_2$ [MD23]. In this article, we study the MacDonald Hamiltonian for twisted transition metal dichalcogenides (TMDs) and analyze the low-lying spectrum in TMDs in the limit of small twisting angles. Unlike in twisted bilayer graphene Hamiltonians, we show that TMDs do not exhibit flat bands. The flatness in TMDs for small twisting angles is due to spatial confinement by a matrix-valued potential. We show that by generalizing semiclassical techniques developed by Simon [Si83] and Helffer-Sj\"ostrand [HS84] to matrix-valued potentials, there exists a wide range of model parameters such that the low-lying bands are of exponentially small width in the twisting angle, topologically trivial, and obey a harmonic oscillator-type spacing with explicit parameters.
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