{"title":"研究 GaSb、GaAs 和 GaP 二元化合物的热光伏效应特征","authors":"A. S. Saidov, Sh. N. Usmonov, O. Z. Turgunov","doi":"10.3103/S0003701X23600753","DOIUrl":null,"url":null,"abstract":"<p>The thermovoltaic effect, which is the occurrence of an electromotive force (EMF) in a substance during its uniform heating, is a promising phenomenon for the development of effective converters of solar thermal energy into electrical energy. However, the problem of suitable materials and design of the thermovoltaic element remains open. Therefore, this work is devoted to the study of the thermovoltaic effect in <i>n</i>‑GaSb, <i>n</i>-GaAs, and <i>n</i>-GaP binary compounds. The current–voltage characteristic (<i>I</i>–<i>V</i> curve) of the structures Ni–Ag–GaSb–Ag–Ni, Ni–Ag–GaAs–Ag–Ni, Ni–Ag–Sn–GaP–Sn–Ag–Ni, Ni–Ag–Si–Ag–Ni, and Au–Ni–Ag–Au are investigated in the temperature range of 300–500 K. As the temperature increased, shifts in the <i>I</i>–<i>V</i> curves of semiconductor structures are observed towards increasing voltage and current, which indicates the appearance of EMF and current during uniform heating. At 500 K, the points of intersection of the <i>I</i>–<i>V</i> curves with the voltage axis are 10.6 mV for GaP, 6.3 mV for GaSb, 5.3 mV for GaAs, and 0.9 mV for Si, as well as with the current axis, respectively 3.8 μA cm<sup>–2</sup> for GaP, 480 μA cm<sup>–2</sup> for GaSb, 184 μA cm<sup>–2</sup> for GaAs, and 2.7 μA cm<sup>–2</sup> for Si. Uniform heating of the structures under consideration in the dark leads to the occurrence of EMF and current in them. The thermally stimulated EMF of the GaSb and GaAs compounds was almost the same (0.2 mV) and an order of magnitude lower than the EMF of the GaP compound (2.5 mV) at 428 K.</p>","PeriodicalId":475,"journal":{"name":"Applied Solar Energy","volume":"59 4","pages":"400 - 409"},"PeriodicalIF":1.2040,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds\",\"authors\":\"A. S. Saidov, Sh. N. Usmonov, O. Z. Turgunov\",\"doi\":\"10.3103/S0003701X23600753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The thermovoltaic effect, which is the occurrence of an electromotive force (EMF) in a substance during its uniform heating, is a promising phenomenon for the development of effective converters of solar thermal energy into electrical energy. However, the problem of suitable materials and design of the thermovoltaic element remains open. Therefore, this work is devoted to the study of the thermovoltaic effect in <i>n</i>‑GaSb, <i>n</i>-GaAs, and <i>n</i>-GaP binary compounds. The current–voltage characteristic (<i>I</i>–<i>V</i> curve) of the structures Ni–Ag–GaSb–Ag–Ni, Ni–Ag–GaAs–Ag–Ni, Ni–Ag–Sn–GaP–Sn–Ag–Ni, Ni–Ag–Si–Ag–Ni, and Au–Ni–Ag–Au are investigated in the temperature range of 300–500 K. As the temperature increased, shifts in the <i>I</i>–<i>V</i> curves of semiconductor structures are observed towards increasing voltage and current, which indicates the appearance of EMF and current during uniform heating. At 500 K, the points of intersection of the <i>I</i>–<i>V</i> curves with the voltage axis are 10.6 mV for GaP, 6.3 mV for GaSb, 5.3 mV for GaAs, and 0.9 mV for Si, as well as with the current axis, respectively 3.8 μA cm<sup>–2</sup> for GaP, 480 μA cm<sup>–2</sup> for GaSb, 184 μA cm<sup>–2</sup> for GaAs, and 2.7 μA cm<sup>–2</sup> for Si. Uniform heating of the structures under consideration in the dark leads to the occurrence of EMF and current in them. The thermally stimulated EMF of the GaSb and GaAs compounds was almost the same (0.2 mV) and an order of magnitude lower than the EMF of the GaP compound (2.5 mV) at 428 K.</p>\",\"PeriodicalId\":475,\"journal\":{\"name\":\"Applied Solar Energy\",\"volume\":\"59 4\",\"pages\":\"400 - 409\"},\"PeriodicalIF\":1.2040,\"publicationDate\":\"2024-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Solar Energy\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S0003701X23600753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Energy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Solar Energy","FirstCategoryId":"1","ListUrlMain":"https://link.springer.com/article/10.3103/S0003701X23600753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Energy","Score":null,"Total":0}
引用次数: 0
摘要
摘要 热电效应是指物质在均匀加热过程中产生的电动势(EMF)。然而,热光伏元件的合适材料和设计问题仍未解决。因此,这项工作致力于研究 n-GaSb、n-GaAs 和 n-GaP 二元化合物的热光伏效应。研究了 300-500 K 温度范围内 Ni-Ag-GaSb-Ag-Ni 、Ni-Ag-GaAs-Ag-Ni、Ni-Ag-Sn-GaP-Sn-Ag-Ni、Ni-Ag-Si-Ag-Ni 和 Au-Ni-Ag-Au 结构的电流-电压特性(I-V 曲线)。在 500 K 时,I-V 曲线与电压轴的交点分别为:GaP 10.6 mV、GaSb 6.3 mV、GaAs 5.3 mV 和 Si 0.9 mV;与电流轴的交点分别为:GaP 3.8 μA cm-2、GaSb 480 μA cm-2、GaAs 184 μA cm-2 和 Si 2.7 μA cm-2。在暗处对所考虑的结构进行均匀加热会在其中产生电磁场和电流。在 428 K 时,GaSb 和 GaAs 化合物的热刺激电磁场几乎相同(0.2 mV),比 GaP 化合物的电磁场(2.5 mV)低一个数量级。
Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds
The thermovoltaic effect, which is the occurrence of an electromotive force (EMF) in a substance during its uniform heating, is a promising phenomenon for the development of effective converters of solar thermal energy into electrical energy. However, the problem of suitable materials and design of the thermovoltaic element remains open. Therefore, this work is devoted to the study of the thermovoltaic effect in n‑GaSb, n-GaAs, and n-GaP binary compounds. The current–voltage characteristic (I–V curve) of the structures Ni–Ag–GaSb–Ag–Ni, Ni–Ag–GaAs–Ag–Ni, Ni–Ag–Sn–GaP–Sn–Ag–Ni, Ni–Ag–Si–Ag–Ni, and Au–Ni–Ag–Au are investigated in the temperature range of 300–500 K. As the temperature increased, shifts in the I–V curves of semiconductor structures are observed towards increasing voltage and current, which indicates the appearance of EMF and current during uniform heating. At 500 K, the points of intersection of the I–V curves with the voltage axis are 10.6 mV for GaP, 6.3 mV for GaSb, 5.3 mV for GaAs, and 0.9 mV for Si, as well as with the current axis, respectively 3.8 μA cm–2 for GaP, 480 μA cm–2 for GaSb, 184 μA cm–2 for GaAs, and 2.7 μA cm–2 for Si. Uniform heating of the structures under consideration in the dark leads to the occurrence of EMF and current in them. The thermally stimulated EMF of the GaSb and GaAs compounds was almost the same (0.2 mV) and an order of magnitude lower than the EMF of the GaP compound (2.5 mV) at 428 K.
期刊介绍:
Applied Solar Energy is an international peer reviewed journal covers various topics of research and development studies on solar energy conversion and use: photovoltaics, thermophotovoltaics, water heaters, passive solar heating systems, drying of agricultural production, water desalination, solar radiation condensers, operation of Big Solar Oven, combined use of solar energy and traditional energy sources, new semiconductors for solar cells and thermophotovoltaic system photocells, engines for autonomous solar stations.