Shuyang Peng, Di Liu, Keyu An, Zhiqin Ying, Mingpeng Chen, Jinxian Feng, Kin Ho Lo, Hui Pan
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引用次数: 0
摘要
光电化学水氧化在文章编号 2304376 中,Kin Ho Lo、Hui Pan 及其合作者报告了一种金属绝缘体-半导体(MIS)结构光阳极(n-Si/SiOx/CoOx-Mo),由于掺入 Mo,其在 1.0 M K3BO3 中的能垒、电荷转移、反应动力学和活性位点均显著增加,因此光阳极的光电电压高达 650 mV,饱和电流密度为 27.6 mA cm-2,填充因子为 0.62。此外,掺入钼的光阳极还具有很高的稳定性。
n-Si/SiOx/CoOx-Mo Photoanode for Efficient Photoelectrochemical Water Oxidation (Small 3/2024)
Photoelectrochemical Water Oxidation
In article number 2304376, Kin Ho Lo, Hui Pan, and co-workers report a metal-insulator-semiconductor (MIS) structure photoanode (n-Si/SiOx/CoOx-Mo) to show a high photovoltage of 650 mV, saturation current density of 27.6 mA cm−2, and fill factor of 0.62 in 1.0 M K3BO3 because the energy barrier, charge transfer, reaction kinetics, and active sites are dramatically increased by the Mo-incorporation. And the Mo-incorporated photoanode is also highly stable.
期刊介绍:
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