Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer

In this work, a β-Ga₂O₃ super barrier rectifier with a current blocking layer (CSBR) is proposed. Its static characteristics, dynamic characteristics and surge capability are investigated by TCAD simulation. The Baliga’s figure of merit (BFOM) can reach 1.62 GW cm⁻² with the on-resistance of 3.68 mΩ cm⁻² and the breakdown voltage of 2447 V, exhibiting excellent performance. Foremost, the turn-on and turn-off of the device is controlled by metal-oxide-semiconductor (MOS) structure. The reverse recovery time is 11.2 ns, which is compatible with that of a Schottky diode. Simulation results show that the dimensions of the cells and the proportion of the ohmic contact region in the cells are the key parameters affecting the reverse recovery time. In addition, the CSBR with double-side cooling configuration demonstrates high surge capability. It can sustain a peak surge current density of 5000 A cm⁻², which is more than 10 times its forward current (V _Forward = 3.0 V). Overall, the proposed structure has a high BFOM, excellent reverse characteristics and high reliability, demonstrating its potential in high voltage applications. Moreover, CSBR can be embedded into Ga₂O₃-MOSFET as a free-wheeling diode.