全集成、自动生成的 DC-DC 转换器,在 12 纳米 FinFET 的宽负载范围内,从 398 K 降至 23 K,保持 >75% 的效率

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-01-01 DOI:10.1109/LSSC.2023.3349129
Anhang Li;Jeongsup Lee;Prashansa Mukim;Brian D. Hoskins;Pragya Shrestha;David Wentzloff;David Blaauw;Dennis Sylvester;Mehdi Saligane
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引用次数: 0

摘要

这封信介绍了一种完全集成的递归逐次逼近式开关电容器 (RSC) DC-DC 转换器,该转换器采用基于单元的自动布局生成技术,采用 12 纳米 FinFET 技术实现。本文基于对开关电容 (SC) DC-DC 转换器最佳能量运行的理论分析,展示了一种新颖的设计方法,可直接从给定的输入规格中找到最佳设计参数。该转换器在很大的输出电流和温度范围内都能保持 >75% 的效率。我们的设计针对低温计算、低温传感和部分量子计算等应用的电压扩展,以实现较高的系统能效。
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A Fully Integrated, Automatically Generated DC–DC Converter Maintaining >75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET
This letter presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC–DC converter implemented using an automatic cell-based layout generation in 12-nm FinFET technology. A novel design methodology is demonstrated based on the theoretical analyses of the optimal energy operation of the switched-capacitor (SC) DC–DC converter and directly finds the optimal design parameters from the given input specifications. The converter maintains >75% efficiency across a vast range of output currents and temperatures. Our design targets voltage scaling for applications, such as cryo-computing, cryo-sensing, and parts of quantum computing, to achieve high-system power efficiency.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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