层状镍酸盐 Pr4Ni3-xCoxO8 用作高温超导体候选材料的中子衍射研究

IF 1.5 4区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY Journal of the Physical Society of Japan Pub Date : 2024-01-26 DOI:10.7566/jpsj.93.024709
Tomonori Miyatake, Yuki Wako, Ryota Abe, Satoru Tsukamoto, Masatomo Uehara
{"title":"层状镍酸盐 Pr4Ni3-xCoxO8 用作高温超导体候选材料的中子衍射研究","authors":"Tomonori Miyatake, Yuki Wako, Ryota Abe, Satoru Tsukamoto, Masatomo Uehara","doi":"10.7566/jpsj.93.024709","DOIUrl":null,"url":null,"abstract":"Layered nickelate R<sub>4</sub>Ni<sub>3</sub>O<sub>8</sub> (R = La, Pr, Nd, Sm) is a candidate for a high-temperature superconductor because its crystal structure and electronic state are very similar to high-temperature superconducting cuprates. We have performed carrier tuning by chemical substitution to Ni sites to bring the electronic states of Ni closer to that of Cu in superconducting cuprates. We aim to substitute the specific Ni sites for carrier tuning without disturbing the NiO<sub>2</sub> planes. In this study, we perform neutron powder diffraction experiments for the Pr<sub>4</sub>Ni<sub>3−</sub><i><sub>x</sub></i>Co<i><sub>x</sub></i>O<sub>8</sub> samples with doping Co for Ni sites to investigate the dopant distribution among the Ni sites. Rietveld analysis showed a tendency to preferentially occupy specific Ni sites when the doping level was low, but this is not the case for higher doping levels. We also analyzed the oxygen deficiency and found no oxygen deficiency in the NiO<sub>2</sub> planes with lower chemical substitutions, indicating that the relatively undisturbed conduction planes were maintained. Finally, we discuss the effects of Co doping into NiO<sub>2</sub> planes for the physical properties of R<sub>4</sub>Ni<sub>3</sub>O<sub>8</sub>.","PeriodicalId":17304,"journal":{"name":"Journal of the Physical Society of Japan","volume":"397 2 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Neutron Diffraction Study of Layered Nickelates Pr4Ni3−xCoxO8 for High-Temperature Superconductor Candidate\",\"authors\":\"Tomonori Miyatake, Yuki Wako, Ryota Abe, Satoru Tsukamoto, Masatomo Uehara\",\"doi\":\"10.7566/jpsj.93.024709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Layered nickelate R<sub>4</sub>Ni<sub>3</sub>O<sub>8</sub> (R = La, Pr, Nd, Sm) is a candidate for a high-temperature superconductor because its crystal structure and electronic state are very similar to high-temperature superconducting cuprates. We have performed carrier tuning by chemical substitution to Ni sites to bring the electronic states of Ni closer to that of Cu in superconducting cuprates. We aim to substitute the specific Ni sites for carrier tuning without disturbing the NiO<sub>2</sub> planes. In this study, we perform neutron powder diffraction experiments for the Pr<sub>4</sub>Ni<sub>3−</sub><i><sub>x</sub></i>Co<i><sub>x</sub></i>O<sub>8</sub> samples with doping Co for Ni sites to investigate the dopant distribution among the Ni sites. Rietveld analysis showed a tendency to preferentially occupy specific Ni sites when the doping level was low, but this is not the case for higher doping levels. We also analyzed the oxygen deficiency and found no oxygen deficiency in the NiO<sub>2</sub> planes with lower chemical substitutions, indicating that the relatively undisturbed conduction planes were maintained. Finally, we discuss the effects of Co doping into NiO<sub>2</sub> planes for the physical properties of R<sub>4</sub>Ni<sub>3</sub>O<sub>8</sub>.\",\"PeriodicalId\":17304,\"journal\":{\"name\":\"Journal of the Physical Society of Japan\",\"volume\":\"397 2 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Physical Society of Japan\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.7566/jpsj.93.024709\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Physical Society of Japan","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.7566/jpsj.93.024709","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

层状镍酸盐 R4Ni3O8(R = La、Pr、Nd、Sm)是高温超导体的候选物质,因为它的晶体结构和电子状态与高温超导铜酸盐非常相似。我们通过对镍位点的化学置换进行了载流子调谐,使镍的电子状态更接近超导铜酸盐中铜的电子状态。我们的目标是在不干扰二氧化镍平面的情况下,替代特定的镍位点进行载流子调谐。在本研究中,我们对掺入 Co 的 Pr4Ni3-xCoxO8 样品进行了中子粉末衍射实验,以研究掺杂剂在 Ni 位点之间的分布。里特维尔德分析表明,当掺杂水平较低时,掺杂剂倾向于优先占据特定的镍位点,但当掺杂水平较高时,情况并非如此。我们还分析了缺氧情况,发现化学取代度较低的二氧化镍平面没有缺氧现象,这表明相对未受干扰的传导平面得以保持。最后,我们讨论了在 NiO2 平面中掺入 Co 对 R4Ni3O8 物理性质的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Neutron Diffraction Study of Layered Nickelates Pr4Ni3−xCoxO8 for High-Temperature Superconductor Candidate
Layered nickelate R4Ni3O8 (R = La, Pr, Nd, Sm) is a candidate for a high-temperature superconductor because its crystal structure and electronic state are very similar to high-temperature superconducting cuprates. We have performed carrier tuning by chemical substitution to Ni sites to bring the electronic states of Ni closer to that of Cu in superconducting cuprates. We aim to substitute the specific Ni sites for carrier tuning without disturbing the NiO2 planes. In this study, we perform neutron powder diffraction experiments for the Pr4Ni3−xCoxO8 samples with doping Co for Ni sites to investigate the dopant distribution among the Ni sites. Rietveld analysis showed a tendency to preferentially occupy specific Ni sites when the doping level was low, but this is not the case for higher doping levels. We also analyzed the oxygen deficiency and found no oxygen deficiency in the NiO2 planes with lower chemical substitutions, indicating that the relatively undisturbed conduction planes were maintained. Finally, we discuss the effects of Co doping into NiO2 planes for the physical properties of R4Ni3O8.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
3.40
自引率
17.60%
发文量
325
审稿时长
3 months
期刊介绍: The papers published in JPSJ should treat fundamental and novel problems of physics scientifically and logically, and contribute to the development in the understanding of physics. The concrete objects are listed below. Subjects Covered JPSJ covers all the fields of physics including (but not restricted to) Elementary particles and fields Nuclear physics Atomic and Molecular Physics Fluid Dynamics Plasma physics Physics of Condensed Matter Metal, Superconductor, Semiconductor, Magnetic Materials, Dielectric Materials Physics of Nanoscale Materials Optics and Quantum Electronics Physics of Complex Systems Mathematical Physics Chemical physics Biophysics Geophysics Astrophysics.
期刊最新文献
A Study of Oscillating Magnetic Fields with Neutron Spin Interferometry Soft Mode Behavior Near the Critical Endpoint of a Nematic Liquid Crystal with Positive Dielectric Anisotropy Effective Mass and Field-Reinforced Superconductivity in Uranium Compounds Equilibrium Flow Structure with Multiple Ion Species in Magnetically Confined Plasmas of an Arbitrary Aspect Ratio Microscopic Derivation of Transition-state Theory for Complex Quantum Systems
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1