Sangmin Han, Hee-Seung Yoon, Juyun Park, Jin-Woo Oh, Yong-Cheol Kang
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引用次数: 0
摘要
在这项工作中,采用射频磁控共溅射技术制造了不同原子比的钼氧碲薄膜。扫描电子显微镜和原子力显微镜显示,纯钼薄膜呈离析状。含 40% Te 的薄膜呈现针状结构,因此 Rq 值最大,为 2.48 nm。接触角测量进一步证实了这一发现,因为含 40% Te 的薄膜疏水性最强。X 射线光电子能谱结果表明,从贫钛到富钛 TF 中,钼的主要氧化态由高(+6)变为低(+4 和/或 +2)。X 射线衍射数据显示,出现了与氧化钼物种有关的峰值,特别是在 33.048°和 33.115°。紫外光电子能谱和开尔文探针测量表明,功函数随 Te 含量的增加而增加。四点探针测量显示,碲化钼薄膜的导电率往往高于纯 Mo 和 Te 薄膜。
Tailoring the surface properties of molybdenum oxytelluride thin films by its compositional ratio
In this work, RF magnetron co-sputtering was used to fabricate molybdenum oxytelluride thin films with different atomic ratios. Scanning electron micrographs and atomic force micrographs revealed that pure Mo thin films were segregated. Thin films with 40% Te content portrayed needle-like structures and thus had the largest Rq value of 2.48 nm. Contact angle measurements further supported the findings as the thin films with 40% Te content were the most hydrophobic. X-ray photoelectron spectroscopy results revealed that the major oxidation states of Mo from Te-poor to Te-rich TFs were changed from high (+6) to low (+4 and/or +2). X-ray diffraction data showed that peaks pertaining to molybdenum oxide species appeared, notably at 33.048° and 33.115°. Ultraviolet photoelectron spectroscopy and Kelvin probe measurements evinced that the work function increases with increasing Te content. Four-point probe measurements revealed that molybdenum oxytelluride thin films tend to have higher electrical conductivity than pure Mo and Te thin films.
期刊介绍:
Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).