Ather Mahmood, Jamie L. Weaver, Syed Qamar Abbas Shah, Will Echtenkamp, Jeffrey W. Lynn, Peter A. Dowben, Christian Binek
{"title":"磁电 B:Cr2O3 中的沉积后界面奈尔温度调节（Adv. Phys. Res. 1/2024）","authors":"Ather Mahmood, Jamie L. Weaver, Syed Qamar Abbas Shah, Will Echtenkamp, Jeffrey W. Lynn, Peter A. Dowben, Christian Binek","doi":"10.1002/apxr.202470001","DOIUrl":null,"url":null,"abstract":"<p><b>Antiferromagnetic Spintronics</b></p><p>Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr<sub>2</sub>O<sub>3</sub>. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, <i>T</i><sub>N</sub>, of B:Cr<sub>2</sub>O<sub>3</sub> is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and <i>T</i><sub>N</sub> increase. Neutron and XPS depth profiling map the depth dependent B-concentration.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202470001","citationCount":"0","resultStr":"{\"title\":\"Post Deposition Interfacial Néel Temperature Tuning in Magnetoelectric B:Cr2O3 (Adv. Phys. Res. 1/2024)\",\"authors\":\"Ather Mahmood, Jamie L. Weaver, Syed Qamar Abbas Shah, Will Echtenkamp, Jeffrey W. Lynn, Peter A. Dowben, Christian Binek\",\"doi\":\"10.1002/apxr.202470001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Antiferromagnetic Spintronics</b></p><p>Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr<sub>2</sub>O<sub>3</sub>. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, <i>T</i><sub>N</sub>, of B:Cr<sub>2</sub>O<sub>3</sub> is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and <i>T</i><sub>N</sub> increase. Neutron and XPS depth profiling map the depth dependent B-concentration.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":100035,\"journal\":{\"name\":\"Advanced Physics Research\",\"volume\":\"3 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202470001\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Physics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/apxr.202470001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/apxr.202470001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
反铁磁性自旋电子学高效、快速的非易失性存储器是反铁磁性自旋电子学的顶峰。封面显示的是一种利用反铁磁性、掺杂 B 的磁电 Cr2O3 薄膜的装置。施加在薄膜上的电压可控制其奈尔矢量和状态变量。为便于高温操作，B:Cr2O3 的奈尔温度 TN 可调。在 Ather Mahmood、Christian Binek 及其同事撰写的文章 2300061 中，冷中子和 X 射线光发射 (XPS) 数据显示，退火会导致界面 B 积累和 TN 上升。中子和 XPS 深度剖析绘制了与深度相关的硼浓度图。
Post Deposition Interfacial Néel Temperature Tuning in Magnetoelectric B:Cr2O3 (Adv. Phys. Res. 1/2024)
Antiferromagnetic Spintronics
Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr2O3. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, TN, of B:Cr2O3 is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and TN increase. Neutron and XPS depth profiling map the depth dependent B-concentration.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
