{"title":"通过氧等离子体预处理提高二氧化硅/硅基片上 MoS2 薄膜的厚度均匀性","authors":"Irang Lim, Youjin Koo, Woong Choi","doi":"10.1007/s13391-024-00487-y","DOIUrl":null,"url":null,"abstract":"<p>We report the enhanced thickness uniformity of chemical-vapor-deposited MoS<sub>2</sub> thin films on SiO<sub>2</sub> substrates through substrate pre-treatment with O<sub>2</sub> plasma. Contact angle measurements indicated that the SiO<sub>2</sub> surface became more hydrophilic with an increase in surface energy after O<sub>2</sub> plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS<sub>2</sub> thin films improved over a centimeter scale after the O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates. Atomic force microscopy analysis further revealed that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates improved the uniformity of surface roughness in the MoS<sub>2</sub> thin films. These results demonstrate that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates is an effective method of enhancing the thickness uniformity of MoS<sub>2</sub> thin films, providing valuable insights for the advancement of large-scale synthesis of MoS<sub>2</sub> and related transition metal dichalcogenides.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"603 - 609"},"PeriodicalIF":2.1000,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma\",\"authors\":\"Irang Lim, Youjin Koo, Woong Choi\",\"doi\":\"10.1007/s13391-024-00487-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>We report the enhanced thickness uniformity of chemical-vapor-deposited MoS<sub>2</sub> thin films on SiO<sub>2</sub> substrates through substrate pre-treatment with O<sub>2</sub> plasma. Contact angle measurements indicated that the SiO<sub>2</sub> surface became more hydrophilic with an increase in surface energy after O<sub>2</sub> plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS<sub>2</sub> thin films improved over a centimeter scale after the O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates. Atomic force microscopy analysis further revealed that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates improved the uniformity of surface roughness in the MoS<sub>2</sub> thin films. These results demonstrate that O<sub>2</sub> plasma pre-treatment on SiO<sub>2</sub> substrates is an effective method of enhancing the thickness uniformity of MoS<sub>2</sub> thin films, providing valuable insights for the advancement of large-scale synthesis of MoS<sub>2</sub> and related transition metal dichalcogenides.</p>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 5\",\"pages\":\"603 - 609\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-02-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-024-00487-y\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00487-y","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma
We report the enhanced thickness uniformity of chemical-vapor-deposited MoS2 thin films on SiO2 substrates through substrate pre-treatment with O2 plasma. Contact angle measurements indicated that the SiO2 surface became more hydrophilic with an increase in surface energy after O2 plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS2 thin films improved over a centimeter scale after the O2 plasma pre-treatment on SiO2 substrates. Atomic force microscopy analysis further revealed that O2 plasma pre-treatment on SiO2 substrates improved the uniformity of surface roughness in the MoS2 thin films. These results demonstrate that O2 plasma pre-treatment on SiO2 substrates is an effective method of enhancing the thickness uniformity of MoS2 thin films, providing valuable insights for the advancement of large-scale synthesis of MoS2 and related transition metal dichalcogenides.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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