测量 EBL 中的短程 PSF

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2024-02-03 DOI:10.1016/j.mne.2024.100238
J. Shapiro, M. Kahl, L.V. Litvin
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引用次数: 0

摘要

对 EBL 中 PSF 的短程(SR)部分进行实验测量至少有三个重要原因:近距离效应校正、研究电子光刻的分辨率极限以及确定 EBL 仪器的光束尺寸。在这项工作中,我们介绍了一种足以完成上述任务的测量技术,目的是对其性能进行评估。我们的方法基于以下原则。我们使用 PSF 的衍生物--线展函数(LSF)--因为后者是一个扩展对象,其尺寸可在尺寸测量过程中沿其长度平均。其次,使用诸如 HSQ 和 PMMA 等薄型负性电阻,在负色调下工作可避免因横向发展而造成的失真。第三,对归一化要求的实验检查验证了所获得的 PSF。8-26 nm (FWHM) 范围内 PSF 的 SR 部分得到了精确测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Measurement of short-range PSF in EBL

Experimental measurement for Short Range (SR) part of PSF in EBL is essential for at least three reasons: Proximity effect correction, the study of the resolution limit of electron lithography, and characterizing the beam size of an EBL instrument. In this work, we introduce a measurement technique that is adequate for the above tasks with the purpose of evaluating its performance. Our approach is based on the following principles. We use a derivate of PSF – Line Spread Function (LSF) - because the latter is an extended object whose size can be averaged along its length during size measurement. Second, the use of thin negative resists like HSQ and PMMA operating in a negative tone avoids distortion due to lateral development. Third, the experimental check of normalization requirement validates the obtained PSFs. SR parts of PSFs in the range of 8–26 nm (FWHM) are accurately measured.

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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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