研究用于先进封装应用的热膨胀系数低、粘合强度高的光敏聚酰亚胺

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-01-26 DOI:10.1109/JEDS.2024.3358830
Yuan-Chiu Huang;Han-Wen Hu;Yun-Hsi Liu;Hui-Ching Hsieh;Kuan-Neng Chen
{"title":"研究用于先进封装应用的热膨胀系数低、粘合强度高的光敏聚酰亚胺","authors":"Yuan-Chiu Huang;Han-Wen Hu;Yun-Hsi Liu;Hui-Ching Hsieh;Kuan-Neng Chen","doi":"10.1109/JEDS.2024.3358830","DOIUrl":null,"url":null,"abstract":"In advanced packaging schemes, such as fan-out integration technology, photosensitive polyimide (PSPI) is the key material to the fabrication of panel level redistribution-layer (RDL). However, a large mismatch of coefficient of thermal expansion (CTE) between silicon (Si) and PSPI will cause serious warpage issue. Furthermore, polyimide deformation may occur under external heat and pressure, leading to deterioration of RDL reliability. In this work, PSPI with low CTE and excellent adhesion strength on different substrate was developed and evaluated by lithography test, adhesion test, and reliability test, showing the high feasibility for the application in advanced packaging process.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10415013","citationCount":"0","resultStr":"{\"title\":\"Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications\",\"authors\":\"Yuan-Chiu Huang;Han-Wen Hu;Yun-Hsi Liu;Hui-Ching Hsieh;Kuan-Neng Chen\",\"doi\":\"10.1109/JEDS.2024.3358830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In advanced packaging schemes, such as fan-out integration technology, photosensitive polyimide (PSPI) is the key material to the fabrication of panel level redistribution-layer (RDL). However, a large mismatch of coefficient of thermal expansion (CTE) between silicon (Si) and PSPI will cause serious warpage issue. Furthermore, polyimide deformation may occur under external heat and pressure, leading to deterioration of RDL reliability. In this work, PSPI with low CTE and excellent adhesion strength on different substrate was developed and evaluated by lithography test, adhesion test, and reliability test, showing the high feasibility for the application in advanced packaging process.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10415013\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10415013/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10415013/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在扇出集成技术等先进封装方案中,光敏聚酰亚胺(PSPI)是制造面板级再分布层(RDL)的关键材料。然而,硅(Si)和聚酰亚胺(PSPI)之间的热膨胀系数(CTE)的巨大不匹配会导致严重的翘曲问题。此外,在外部热量和压力的作用下,聚酰亚胺可能会发生变形,从而导致 RDL 的可靠性下降。本研究开发了在不同基底上具有低 CTE 和出色附着力的 PSPI,并通过光刻测试、附着力测试和可靠性测试进行了评估,结果表明其在先进封装工艺中的应用具有很高的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications
In advanced packaging schemes, such as fan-out integration technology, photosensitive polyimide (PSPI) is the key material to the fabrication of panel level redistribution-layer (RDL). However, a large mismatch of coefficient of thermal expansion (CTE) between silicon (Si) and PSPI will cause serious warpage issue. Furthermore, polyimide deformation may occur under external heat and pressure, leading to deterioration of RDL reliability. In this work, PSPI with low CTE and excellent adhesion strength on different substrate was developed and evaluated by lithography test, adhesion test, and reliability test, showing the high feasibility for the application in advanced packaging process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
期刊最新文献
Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO2 Gate Insulator Fully Integrated GaN-on-Silicon Power-Rail ESD Clamp Circuit Without Transient Leakage Current During Normal Power-on Operation Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference System Impact of Strain on Sub-3 nm Gate-all-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach A Novel Parallel In-Memory Logic Array Based on Programmable Diodes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1