{"title":"以 400 纳米互连间距实现晶圆到晶圆混合键合","authors":"Soon Aik Chew, Joeri De Vos, Eric Beyne","doi":"10.1038/s44287-024-00019-8","DOIUrl":null,"url":null,"abstract":"Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple heterogeneous chips with high 3D interconnect density. We highlight recent design and technology innovations that enable hybrid Cu, SiCN-to-Cu and SiCN bonding with interconnect pitches down to an unprecedented 400 nm.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"1 2","pages":"71-72"},"PeriodicalIF":0.0000,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wafer-to-wafer hybrid bonding at 400-nm interconnect pitch\",\"authors\":\"Soon Aik Chew, Joeri De Vos, Eric Beyne\",\"doi\":\"10.1038/s44287-024-00019-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple heterogeneous chips with high 3D interconnect density. We highlight recent design and technology innovations that enable hybrid Cu, SiCN-to-Cu and SiCN bonding with interconnect pitches down to an unprecedented 400 nm.\",\"PeriodicalId\":501701,\"journal\":{\"name\":\"Nature Reviews Electrical Engineering\",\"volume\":\"1 2\",\"pages\":\"71-72\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Reviews Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44287-024-00019-8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00019-8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wafer-to-wafer hybrid bonding at 400-nm interconnect pitch
Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple heterogeneous chips with high 3D interconnect density. We highlight recent design and technology innovations that enable hybrid Cu, SiCN-to-Cu and SiCN bonding with interconnect pitches down to an unprecedented 400 nm.
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