通过一维电极耦合到等离子体元表面的 hBN 封装石墨烯用于光探测应用

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-02-02 DOI:10.1002/adpr.202300192
Christian Frydendahl, S. Indukuri, Taget Raghavendran Devidas, Zhengli Han, N. Mazurski, Kenji Watanabe, Takashi Taniguchi, Hadar Steinberg, Uriel Levy
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引用次数: 0

摘要

本文展示了如何通过一维边缘接触将封装石墨烯器件横向耦合到等离子体元表面,从而在增强光学耦合的同时保持封装石墨烯的高流动性。该器件可用于光探测应用,据报道,在大部分可见光谱范围内,其响应率高达 100 A W-1。该器件表现出的光ogating效应可归因于封装氢化硼层中的缺陷态。研究结果强调了石墨烯与等离子体结构耦合的新构造,并指出一种基于缺陷态和石墨烯优异传输特性的新型器件可实现超高响应率的光电探测器。
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hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
It is shown here how encapsulated graphene devices can be laterally coupled to plasmonic metasurfaces via 1D edge contacts, preserving the high mobility of encapsulated graphene while enhancing optical coupling. The device is used for photodetection applications where high responsivities in the range of 100 A W−1 for most of the visible spectrum are reported. The device exhibits a photogating effect which is attributed to defect states in the encapsulating hBN layers. The results highlight a new configuration to couple graphene with plasmonic structures and points to a new type of device based on defect states and graphene's excellent transport properties to achieve photodetectors with ultrahigh responsivities.
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