基于氧化锌光阳极纳米复合材料的染料敏化太阳能电池光电性能的增强

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2024-02-01 DOI:10.15251/jor.2024.201.85
A. V. Balan, P. Gopinath, V. Radhika
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引用次数: 0

摘要

通过沉淀法制备的氧化锌纳米粒子的 XRD 和 SEM 图像可以研究其形态和形态细化。X 射线衍射光谱中未观察到污染,扫描电镜证实纳米颗粒是配位良好的氧化锌,大小为 30 纳米。紫外可见光谱被用来调整光学特性,它们似乎并不固定在 3.34 eV。半导体材料的带隙使其在太阳能电池应用中具有竞争力。XPS 测得的富含 O 的化学计量可能是缺锌的直接结果。因此,我们制备了氧化锌纳米粒子来制造分泌型太阳能电池(DSSC)。从 J-V 的角度来看,开路电压 (Voc)、势垒厚度 (Jsc)、填充因子 (FF) 和效率 (η)尽可能不作选择,并计算出质量为 0.65V、6.26mA.在 100mW/cm2 条件下,质量分别为 0.65V、6.26mA.
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Enhanced photovoltaic performance of dye sensitized solar cell based on nanocomposites of zinc oxide photoanode
XRD and SEM images of ZnO nanoparticles prepared by the precipitation method allow investigation of their morphology and morphological refinement. No contamination was observed in the XRD spectrum and SEM confirmed that the nanoparticles were wellcoordinated ZnO at 30 nm size. UV-Vis spectroscopy was used to tune the optical properties and they appeared not to be fixed at 3.34 eV. The band gap of semiconductor materials makes them competitive for solar cell applications. The O-rich stoichiometry measured by XPS may be a direct result of zinc deficiency. Therefore, ZnO nanoparticles were prepared to fabricate secretory solar cells (DSSCs). From the perspective of J-V, open circuit voltage (Voc), barrier thickness (Jsc), fill factor (FF) and efficiency (η) were not chosen as much as possible and the quality was calculated as 0.65V, 6.26mA. , 62.2% and 1.96% respectively at 100mW/cm2 .
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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