Hang Liu , Yi Xiao , Binbin Lin , Duanyang Chen , Hongji Qi
{"title":"利用 LSLM 生长大尺寸立方体 KDP 晶体过程中的流动和传质数值模拟","authors":"Hang Liu , Yi Xiao , Binbin Lin , Duanyang Chen , Hongji Qi","doi":"10.1016/j.jcrysgro.2024.127628","DOIUrl":null,"url":null,"abstract":"<div><p>The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen phosphate (KDP) grown by the long seed limitation method (LSLM) has been performed employing the finite element method. The standard <em>k</em>-<em>ε</em> model with the enhanced wall treatment is used to calculate the turbulence flow in the growth vessel. The temporal and spatial evolution of flow field near the crystal face and supersaturation field on the crystal face during the growth is discussed in detail. The time-averaged supersaturation field on the crystal face at various factors is analyzed. The relative strengths of natural and forced convections on different conditions is compared, the convective mass transfer regime at different conditions is revealed.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM\",\"authors\":\"Hang Liu , Yi Xiao , Binbin Lin , Duanyang Chen , Hongji Qi\",\"doi\":\"10.1016/j.jcrysgro.2024.127628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen phosphate (KDP) grown by the long seed limitation method (LSLM) has been performed employing the finite element method. The standard <em>k</em>-<em>ε</em> model with the enhanced wall treatment is used to calculate the turbulence flow in the growth vessel. The temporal and spatial evolution of flow field near the crystal face and supersaturation field on the crystal face during the growth is discussed in detail. The time-averaged supersaturation field on the crystal face at various factors is analyzed. The relative strengths of natural and forced convections on different conditions is compared, the convective mass transfer regime at different conditions is revealed.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824000630\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824000630","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM
The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen phosphate (KDP) grown by the long seed limitation method (LSLM) has been performed employing the finite element method. The standard k-ε model with the enhanced wall treatment is used to calculate the turbulence flow in the growth vessel. The temporal and spatial evolution of flow field near the crystal face and supersaturation field on the crystal face during the growth is discussed in detail. The time-averaged supersaturation field on the crystal face at various factors is analyzed. The relative strengths of natural and forced convections on different conditions is compared, the convective mass transfer regime at different conditions is revealed.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.