利用 LSLM 生长大尺寸立方体 KDP 晶体过程中的流动和传质数值模拟

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-02-20 DOI:10.1016/j.jcrysgro.2024.127628
Hang Liu , Yi Xiao , Binbin Lin , Duanyang Chen , Hongji Qi
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引用次数: 0

摘要

生长高质量的大尺寸 KDP 晶体是为了满足高功率激光系统的要求。KDP 溶液的对流传输特性是影响大尺寸 KDP 晶体在生长容器中生长的关键因素之一。本研究采用有限元法对长籽限长法(LSLM)生长大尺寸立方体磷酸二氢钾(KDP)过程中发生的流动和传质进行了三维模拟。计算生长容器中的湍流时使用了增强壁处理的标准 k-ε 模型。详细讨论了生长过程中晶体面附近流场和晶体面上过饱和度场的时空演变。分析了不同因素下晶体面上的时间平均过饱和度场。比较了不同条件下自然对流和强制对流的相对强度,揭示了不同条件下的对流传质机制。
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Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM

The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen phosphate (KDP) grown by the long seed limitation method (LSLM) has been performed employing the finite element method. The standard k-ε model with the enhanced wall treatment is used to calculate the turbulence flow in the growth vessel. The temporal and spatial evolution of flow field near the crystal face and supersaturation field on the crystal face during the growth is discussed in detail. The time-averaged supersaturation field on the crystal face at various factors is analyzed. The relative strengths of natural and forced convections on different conditions is compared, the convective mass transfer regime at different conditions is revealed.

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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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