Lang Chen;Lisheng Chen;Depeng Sun;Yichuang Sun;Yulin Pan;Xi Zhu
{"title":"在 6dB 功率衰减时输出功率为 22dBm 且功率附加效率为 21% 的 39 GHz 类多赫蒂功率放大器","authors":"Lang Chen;Lisheng Chen;Depeng Sun;Yichuang Sun;Yulin Pan;Xi Zhu","doi":"10.1109/JETCAS.2024.3351075","DOIUrl":null,"url":null,"abstract":"The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical load-modulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-\n<inline-formula> <tex-math>$50~\\Omega $ </tex-math></inline-formula>\n load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the S-LMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (\n<inline-formula> <tex-math>$\\text{P}_{\\mathrm {sat}}$ </tex-math></inline-formula>\n) with a maximum power-added efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVM\n<inline-formula> <tex-math>$_{\\mathrm {rms}}$ </tex-math></inline-formula>\n) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadrature-amplitude-modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"88-99"},"PeriodicalIF":3.7000,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off\",\"authors\":\"Lang Chen;Lisheng Chen;Depeng Sun;Yichuang Sun;Yulin Pan;Xi Zhu\",\"doi\":\"10.1109/JETCAS.2024.3351075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical load-modulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-\\n<inline-formula> <tex-math>$50~\\\\Omega $ </tex-math></inline-formula>\\n load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the S-LMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (\\n<inline-formula> <tex-math>$\\\\text{P}_{\\\\mathrm {sat}}$ </tex-math></inline-formula>\\n) with a maximum power-added efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVM\\n<inline-formula> <tex-math>$_{\\\\mathrm {rms}}$ </tex-math></inline-formula>\\n) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadrature-amplitude-modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.\",\"PeriodicalId\":48827,\"journal\":{\"name\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"volume\":\"14 1\",\"pages\":\"88-99\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-01-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10382503/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10382503/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off
The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical load-modulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-
$50~\Omega $
load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the S-LMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (
$\text{P}_{\mathrm {sat}}$
) with a maximum power-added efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVM
$_{\mathrm {rms}}$
) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadrature-amplitude-modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.