{"title":"利用非零基极阻抗优化功率增益和输出功率的 185 至 240 GHz SiGe 功率放大器","authors":"Xin Zhang;Nengxu Zhu;Fanyi Meng","doi":"10.1109/JETCAS.2024.3355011","DOIUrl":null,"url":null,"abstract":"It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-\n<inline-formula> <tex-math>$\\mu \\text{m}$ </tex-math></inline-formula>\n SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output \n<inline-formula> <tex-math>$P_{\\mathrm {1dB}}/P_{\\mathrm {SAT}}$ </tex-math></inline-formula>\n of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations\",\"authors\":\"Xin Zhang;Nengxu Zhu;Fanyi Meng\",\"doi\":\"10.1109/JETCAS.2024.3355011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-\\n<inline-formula> <tex-math>$\\\\mu \\\\text{m}$ </tex-math></inline-formula>\\n SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output \\n<inline-formula> <tex-math>$P_{\\\\mathrm {1dB}}/P_{\\\\mathrm {SAT}}$ </tex-math></inline-formula>\\n of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.\",\"PeriodicalId\":48827,\"journal\":{\"name\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10401235/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10401235/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations
It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-
$\mu \text{m}$
SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output
$P_{\mathrm {1dB}}/P_{\mathrm {SAT}}$
of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.