利用非零基极阻抗优化功率增益和输出功率的 185 至 240 GHz SiGe 功率放大器

IF 3.7 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-16 DOI:10.1109/JETCAS.2024.3355011
Xin Zhang;Nengxu Zhu;Fanyi Meng
{"title":"利用非零基极阻抗优化功率增益和输出功率的 185 至 240 GHz SiGe 功率放大器","authors":"Xin Zhang;Nengxu Zhu;Fanyi Meng","doi":"10.1109/JETCAS.2024.3355011","DOIUrl":null,"url":null,"abstract":"It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-\n<inline-formula> <tex-math>$\\mu \\text{m}$ </tex-math></inline-formula>\n SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output \n<inline-formula> <tex-math>$P_{\\mathrm {1dB}}/P_{\\mathrm {SAT}}$ </tex-math></inline-formula>\n of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"67-74"},"PeriodicalIF":3.7000,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations\",\"authors\":\"Xin Zhang;Nengxu Zhu;Fanyi Meng\",\"doi\":\"10.1109/JETCAS.2024.3355011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-\\n<inline-formula> <tex-math>$\\\\mu \\\\text{m}$ </tex-math></inline-formula>\\n SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output \\n<inline-formula> <tex-math>$P_{\\\\mathrm {1dB}}/P_{\\\\mathrm {SAT}}$ </tex-math></inline-formula>\\n of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.\",\"PeriodicalId\":48827,\"journal\":{\"name\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"volume\":\"14 1\",\"pages\":\"67-74\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10401235/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10401235/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

毫米波和太赫兹级联放大器通常采用的方法是通过缩短共基晶体管中的基极阻抗来提高功率增益。但研究发现,在基极阻抗为零的情况下,并不能同时实现高输出功率的优点。本文从理论上分析了通过改变基极阻抗来提高功率增益和输出功率水平的最佳设计。此外,本文还给出了数值结果,证明非零基极阻抗是增益和输出功率增强的关键参数。因此,根据功率增益和输出功率目标,功率放大器的每一级都必须包含不同的优化基极阻抗。为了验证设计理论,我们设计了一款 220 GHz 功率放大器,并采用 0.13- $\mu \text{m}$ SiGe 技术进行制造。测量结果表明,该放大器的工作带宽为 185 至 240 GHz,功率增益为 25 dB,输出 $P_{\mathrm {1dB}}/P_{\mathrm {SAT}}$ 为 7.3/9.5 dBm。它的直流功耗为 310~324 mW,核心面积为 0.09 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations
It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13- $\mu \text{m}$ SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output $P_{\mathrm {1dB}}/P_{\mathrm {SAT}}$ of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
8.50
自引率
2.20%
发文量
86
期刊介绍: The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.
期刊最新文献
Introducing IEEE Collabratec Table of Contents IEEE Journal on Emerging and Selected Topics in Circuits and Systems Information for Authors IEEE Circuits and Systems Society Information IEEE Journal on Emerging and Selected Topics in Circuits and Systems Publication Information
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1