Yutong Wang;Bo Li;Feng Lin;Houjun Sun;Hongjiang Wu;Chunliang Xu;Yuan Fang;Zhiqiang Li
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Based on the 90-nm GaAs pHEMT process, a 26~80 GHz attenuator chip I and a 40~110 GHz attenuator chip II were designed and measured, with chip sizes of \n<inline-formula> <tex-math>$1.65\\ast 0.85$ </tex-math></inline-formula>\nmm2 and \n<inline-formula> <tex-math>$1.30\\ast 0.80$ </tex-math></inline-formula>\nmm2, respectively. In the operating frequency band, the measured insertion losses (IL) of chips I and II are less than 2.8 dB and 2.2 dB, respectively, with the return losses (RL) of better than 12.4 dB and 11.6 dB. At the center frequency, the measured attenuation ranges of Chip I and II are \n<inline-formula> <tex-math>$1.4\\sim 34.4$ </tex-math></inline-formula>\n dB and \n<inline-formula> <tex-math>$1.1\\sim 30.9$ </tex-math></inline-formula>\n dB, respectively, and the 1dB compressed input power (\n<inline-formula> <tex-math>$IP_{\\mathrm {1dB}})$ </tex-math></inline-formula>\n of both chips are greater than 21 dBm. To the best of authors’ knowledge, this is the first wide-band mmW GaAs pHEMT attenuator chip integrated with absorption SPST switching function.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband Millimeter-Wave GaAs Dual-Function Switching Attenuators With Low Insertion Loss and Large Attenuation Range\",\"authors\":\"Yutong Wang;Bo Li;Feng Lin;Houjun Sun;Hongjiang Wu;Chunliang Xu;Yuan Fang;Zhiqiang Li\",\"doi\":\"10.1109/JETCAS.2024.3354778\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents millimeter-wave (mmW) wide-band dual-function switching attenuator chips based on gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT). The broadband attenuator chips integrate the function of absorption single-pole-single-throw (SPST) switch by using balanced architecture. By analyzing the effects of transistor size and parasitic couplings from bias lines on mmW attenuator chips, the attenuation range is further improved. Based on the 90-nm GaAs pHEMT process, a 26~80 GHz attenuator chip I and a 40~110 GHz attenuator chip II were designed and measured, with chip sizes of \\n<inline-formula> <tex-math>$1.65\\\\ast 0.85$ </tex-math></inline-formula>\\nmm2 and \\n<inline-formula> <tex-math>$1.30\\\\ast 0.80$ </tex-math></inline-formula>\\nmm2, respectively. In the operating frequency band, the measured insertion losses (IL) of chips I and II are less than 2.8 dB and 2.2 dB, respectively, with the return losses (RL) of better than 12.4 dB and 11.6 dB. At the center frequency, the measured attenuation ranges of Chip I and II are \\n<inline-formula> <tex-math>$1.4\\\\sim 34.4$ </tex-math></inline-formula>\\n dB and \\n<inline-formula> <tex-math>$1.1\\\\sim 30.9$ </tex-math></inline-formula>\\n dB, respectively, and the 1dB compressed input power (\\n<inline-formula> <tex-math>$IP_{\\\\mathrm {1dB}})$ </tex-math></inline-formula>\\n of both chips are greater than 21 dBm. 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引用次数: 0
摘要
本文介绍了基于砷化镓(GaAs)拟态高电子迁移率晶体管(pHEMT)的毫米波(mmW)宽带双功能开关衰减器芯片。这种宽带衰减器芯片采用平衡式结构,集成了吸收式单刀单掷(SPST)开关的功能。通过分析晶体管尺寸和偏置线寄生耦合对毫米波衰减器芯片的影响,衰减范围得到了进一步改善。基于 90 纳米砷化镓 pHEMT 工艺,设计并测量了 26~80 GHz 衰减器芯片 I 和 40~110 GHz 衰减器芯片 II,芯片尺寸分别为 1.65/ast 0.85$ mm2 和 1.30/ast 0.80$ mm2。在工作频段,芯片 I 和芯片 II 测得的插入损耗(IL)分别小于 2.8 dB 和 2.2 dB,回波损耗(RL)分别优于 12.4 dB 和 11.6 dB。在中心频率,芯片 I 和芯片 II 的测量衰减范围分别为 1.4/sim 34.4$ dB 和 1.1/sim 30.9$ dB,两个芯片的 1dB 压缩输入功率 ( $IP_{\mathrm {1dB}})$ 均大于 21 dBm。据作者所知,这是第一款集成了吸收 SPST 开关功能的宽带毫米波砷化镓 pHEMT 衰减器芯片。
Broadband Millimeter-Wave GaAs Dual-Function Switching Attenuators With Low Insertion Loss and Large Attenuation Range
This paper presents millimeter-wave (mmW) wide-band dual-function switching attenuator chips based on gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT). The broadband attenuator chips integrate the function of absorption single-pole-single-throw (SPST) switch by using balanced architecture. By analyzing the effects of transistor size and parasitic couplings from bias lines on mmW attenuator chips, the attenuation range is further improved. Based on the 90-nm GaAs pHEMT process, a 26~80 GHz attenuator chip I and a 40~110 GHz attenuator chip II were designed and measured, with chip sizes of
$1.65\ast 0.85$
mm2 and
$1.30\ast 0.80$
mm2, respectively. In the operating frequency band, the measured insertion losses (IL) of chips I and II are less than 2.8 dB and 2.2 dB, respectively, with the return losses (RL) of better than 12.4 dB and 11.6 dB. At the center frequency, the measured attenuation ranges of Chip I and II are
$1.4\sim 34.4$
dB and
$1.1\sim 30.9$
dB, respectively, and the 1dB compressed input power (
$IP_{\mathrm {1dB}})$
of both chips are greater than 21 dBm. To the best of authors’ knowledge, this is the first wide-band mmW GaAs pHEMT attenuator chip integrated with absorption SPST switching function.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.