Memory effects in isotropic semiconductors: a three-phase lag model analysis

This article aims to explore the isotropic three-phase (3PH) lag magneto-photo-thermoelastic (PTE) theory in semiconductor medium, with a focus on its memory-dependent-derivative (MDD) characteristics. The equations for displacement, temperature distribution, carrier density, and stress components resulting from this theory are formulated using these characteristics and then transformed into a Fourier-Laplace vector matrix differential equation. An eigenvalue approach is used to solve this equation, and the numerical solution is obtained by inverting Fourier and Laplace transforms. Graphical results based on the characteristics of silicon material are visualized through the use of Mathematica software. The validity of the proposed model is evaluated by comparing them with previously published results. The outputs demonstrate that the impact of MDD in this 3PH model was analyzed in detail by showing the effect of coupling between thermal, plasma, and elastic waves with the presence of time-delay parameters and linear kernel function. Additionally, the presence of several kernel functions reveals significant differences in these magneto PTE quantities. The authors believe this study will help more accurately characterize materials, optimize device design, and explore nonlinear and transient phenomena in more detail.