S. Yuan;K. Omori;T. Yamaguchi;T. Ide;S. Muranaka;M. Inoue
{"title":"通过超高剂量 C 和硅离子注入提高化学机械抛光的选择性","authors":"S. Yuan;K. Omori;T. Yamaguchi;T. Ide;S. Muranaka;M. Inoue","doi":"10.1109/JEDS.2024.3371455","DOIUrl":null,"url":null,"abstract":"The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at \n<inline-formula> <tex-math>$3\\times 10{^{{16}}}$ </tex-math></inline-formula>\n ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at \n<inline-formula> <tex-math>$1\\times 10{^{{16}}}$ </tex-math></inline-formula>\n ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"407-414"},"PeriodicalIF":2.9000,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10454590","citationCount":"0","resultStr":"{\"title\":\"Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation\",\"authors\":\"S. Yuan;K. Omori;T. Yamaguchi;T. Ide;S. Muranaka;M. Inoue\",\"doi\":\"10.1109/JEDS.2024.3371455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at \\n<inline-formula> <tex-math>$3\\\\times 10{^{{16}}}$ </tex-math></inline-formula>\\n ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at \\n<inline-formula> <tex-math>$1\\\\times 10{^{{16}}}$ </tex-math></inline-formula>\\n ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"407-414\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-02-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10454590\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10454590/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10454590/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation
The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at
$3\times 10{^{{16}}}$
ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at
$1\times 10{^{{16}}}$
ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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