基于 BiVO4 和 WO3 的异质结构和复合材料的光电化学特性比较

Monatshefte für Chemie / Chemical Monthly Pub Date : 2024-02-27 DOI:10.1007/s00706-023-03167-z

V. O. Smilyk, S. S. Fomanyuk, I. A. Rusetskyi, M. O. Danilov, G. Ya. Kolbasov

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摘要

通过电化学沉积法获得了异质结构 BiVO4/WO3、BiVO4 与 WO3 的复合薄膜以及纯 BiVO4 薄膜。对这些薄膜的光电化学特性进行的分析表明，与异质结构 BiVO4/WO3 相比，纯 BiVO4 薄膜的光电量子产率有所提高，光阳极上氧演化的过电压有所降低，而异质结构 BiVO4/WO3 和复合 BiVO4-WO3 的光电量子产率则低于纯 BiVO4 薄膜。与异质结构 BiVO4/WO3 和纯 BiVO4 相比，BiVO4-WO3 复合材料在减少与电子和空穴表面重组相关的能量损失以及减少界面电荷转移阶段的损失方面具有积极作用，其原因就在于此。

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Comparative photoelectrochemical characteristics of heterostructure and composite based on BiVO4 and WO3

Films of heterostructure BiVO₄/WO₃, composite BiVO₄ with WO₃ and pure BiVO₄ were obtained by electrochemical deposition. Analysis of photoelectrochemical characteristics of such films showed that observed increase in photocurrent quantum yield and decrease in overvoltage of oxygen evolution on the photoanode in row from pure BiVO₄ films, than in heterostructure BiVO4/WO₃, after that—composite BiVO₄–WO₃. The reason of such positive effect of reducing the energy losses associated with the surface recombination of electrons and holes and reduction of losses at the stage of interfacial charge transfer in the BiVO₄–WO₃ composite compared with the heterostructure BiVO₄/WO₃ and pure BiVO₄.