室温波导耦合硅单光子雪崩二极管

Alperen Govdeli, John N. Straguzzi, Zheng Yong, Yiding Lin, Xianshu Luo, Hongyao Chua, Guo-Qiang Lo, Wesley D. Sacher, Joyce K. S. Poon
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引用次数: 0

摘要

单光子探测对于量子信息处理、光谱学以及光探测和测距(LiDAR)等广泛的低光应用非常重要。这些应用中的一个关键挑战是如何将单光子探测功能集成到光子电路中,以实现复杂的光子微系统。使用硅(Si)作为光电探测器的短波长(λ < 1.1 μm)集成光子学平台为实现在室温或接近室温下工作的单光子雪崩二极管(SPAD)提供了机会。在此,我们报告了首个波导耦合硅 SPAD。该器件单片集成在硅光子平台中,可在可见光谱范围内工作。该器件在波长为 488 纳米和 532 纳米时的单光子检测效率为 6%,过剩电压为击穿电压的 20%。室温下的暗计数率低于 100 kHz,将温度降至 -5 °C,可提高约 35%。
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Room-temperature waveguide-coupled silicon single-photon avalanche diodes
Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate single-photon detection capability into photonic circuits for the realization of complex photonic microsystems. Short-wavelength (λ < 1.1 μm) integrated photonics platforms that use silicon (Si) as photodetectors offer the opportunity to achieve single-photon avalanche diodes (SPADs) that operate at or near room temperature. Here, we report the first waveguide-coupled Si SPAD. The device is monolithically integrated in a Si photonic platform and operates in the visible spectrum. The device exhibited a single photon detection efficiency of >6% for wavelengths of 488 and 532 nm with an excess voltage of <20% of the breakdown voltage. The dark count rate was below 100 kHz at room temperature, with the possibility of improving by approximately 35% by reducing the temperature to −5 °C.
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