Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry

We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.