{"title":"原子层沉积温度对氧化锌：铝薄膜电学和光学特性的影响","authors":"Gerard Masmitjà , Pau Estarlich , Gema Lopez , Isidro Martín , Cristobal Voz , Marcel Placidi , Arnau Torrens , Edgardo Saucedo Silva , Pia Vasquez , Delfina Muñoz , Joaquim Puigdollers , Pablo Ortega","doi":"10.1016/j.jsamd.2024.100698","DOIUrl":null,"url":null,"abstract":"<div><p>This work highlights the impact of growth temperature on the electrical and optical properties of Al-doped ZnO (AZO) films deposited by the atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 mΩcm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap, resulting in ALD AZO films with excellent properties to be applied in photovoltaic devices as transparent conductive oxide electrode.</p></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":null,"pages":null},"PeriodicalIF":6.7000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2468217924000297/pdfft?md5=0b52c7b6dd1f1493b85a12a92d4cf6c5&pid=1-s2.0-S2468217924000297-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films\",\"authors\":\"Gerard Masmitjà , Pau Estarlich , Gema Lopez , Isidro Martín , Cristobal Voz , Marcel Placidi , Arnau Torrens , Edgardo Saucedo Silva , Pia Vasquez , Delfina Muñoz , Joaquim Puigdollers , Pablo Ortega\",\"doi\":\"10.1016/j.jsamd.2024.100698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work highlights the impact of growth temperature on the electrical and optical properties of Al-doped ZnO (AZO) films deposited by the atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 mΩcm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap, resulting in ALD AZO films with excellent properties to be applied in photovoltaic devices as transparent conductive oxide electrode.</p></div>\",\"PeriodicalId\":17219,\"journal\":{\"name\":\"Journal of Science: Advanced Materials and Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.7000,\"publicationDate\":\"2024-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2468217924000297/pdfft?md5=0b52c7b6dd1f1493b85a12a92d4cf6c5&pid=1-s2.0-S2468217924000297-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Science: Advanced Materials and Devices\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468217924000297\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science: Advanced Materials and Devices","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468217924000297","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Impact of atomic layer deposition temperature on electrical and optical properties of ZnO:Al films
This work highlights the impact of growth temperature on the electrical and optical properties of Al-doped ZnO (AZO) films deposited by the atomic layer deposition (ALD) technique. The ALD process and super-cycle sequence have been optimized, identifying their influence on film resistivity. By using this optimum ALD procedure, the optical and electrical properties of AZO films have been widely analyzed considering the deposition temperature. Results show promising values with film resistivity in the range of 1 mΩcm and average optical absorption below 2% for 50 nm thick AZO layers. Hall effect, X-ray diffraction and ellipsometry measurements point out that these excellent values are related to their high carrier concentration and mobility, crystalline phase and optical band gap, resulting in ALD AZO films with excellent properties to be applied in photovoltaic devices as transparent conductive oxide electrode.
期刊介绍：
In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research.
Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science.
With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.
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