S. Farhad, Md Moazzem Hossain, M. S. Bashar, N. Tanvir, Suravi Islam
{"title":"利用简单的静电电沉积技术生长的纯相 Cu2O 薄膜的纹理和带隙调节","authors":"S. Farhad, Md Moazzem Hossain, M. S. Bashar, N. Tanvir, Suravi Islam","doi":"10.1149/2754-2734/ad2f46","DOIUrl":null,"url":null,"abstract":"\n Highly-textured phase pure Cu2O thin films have been grown on fluorine-doped SnO2 substrates by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). Surface morphology characterization by scanning electron microscopy revealed that the deposited thin films coherently carpet the underlying substrate and are composed of sharp faceted well-defined grains of 0.5 – 1.0 µm sizes. The optical bandgap of the as-grown samples was calculated in the range of 1.95 – 2.20 eV. The performance of Cu2O films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.","PeriodicalId":489350,"journal":{"name":"ECS advances","volume":"36 5","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Texture and Bandgap Tuning of Phase Pure Cu2O Thin Films Grown by a Simple Potentiostatic Electrodeposition Technique\",\"authors\":\"S. Farhad, Md Moazzem Hossain, M. S. Bashar, N. Tanvir, Suravi Islam\",\"doi\":\"10.1149/2754-2734/ad2f46\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Highly-textured phase pure Cu2O thin films have been grown on fluorine-doped SnO2 substrates by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). Surface morphology characterization by scanning electron microscopy revealed that the deposited thin films coherently carpet the underlying substrate and are composed of sharp faceted well-defined grains of 0.5 – 1.0 µm sizes. The optical bandgap of the as-grown samples was calculated in the range of 1.95 – 2.20 eV. The performance of Cu2O films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.\",\"PeriodicalId\":489350,\"journal\":{\"name\":\"ECS advances\",\"volume\":\"36 5\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS advances\",\"FirstCategoryId\":\"0\",\"ListUrlMain\":\"https://doi.org/10.1149/2754-2734/ad2f46\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS advances","FirstCategoryId":"0","ListUrlMain":"https://doi.org/10.1149/2754-2734/ad2f46","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
通过不同沉积电压(-0.3 至 -1.0 V)的简单电沉积技术,在掺氟二氧化锡基底上生长出了高纹理相纯的氧化铜薄膜。扫描电子显微镜的表面形貌表征显示,沉积的薄膜与底层基底连成一体,由 0.5 - 1.0 µm 大小的锐利切面清晰晶粒组成。根据计算,生长样品的光带隙在 1.95 - 2.20 eV 之间。Cu2O 薄膜的性能测试方法是在零偏压条件下,在光电化学电池中估算 LED "开/关 "调制表面光电压。
Texture and Bandgap Tuning of Phase Pure Cu2O Thin Films Grown by a Simple Potentiostatic Electrodeposition Technique
Highly-textured phase pure Cu2O thin films have been grown on fluorine-doped SnO2 substrates by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). Surface morphology characterization by scanning electron microscopy revealed that the deposited thin films coherently carpet the underlying substrate and are composed of sharp faceted well-defined grains of 0.5 – 1.0 µm sizes. The optical bandgap of the as-grown samples was calculated in the range of 1.95 – 2.20 eV. The performance of Cu2O films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.