利用简单的静电电沉积技术生长的纯相 Cu2O 薄膜的纹理和带隙调节

S. Farhad, Md Moazzem Hossain, M. S. Bashar, N. Tanvir, Suravi Islam
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引用次数: 0

摘要

通过不同沉积电压(-0.3 至 -1.0 V)的简单电沉积技术,在掺氟二氧化锡基底上生长出了高纹理相纯的氧化铜薄膜。扫描电子显微镜的表面形貌表征显示,沉积的薄膜与底层基底连成一体,由 0.5 - 1.0 µm 大小的锐利切面清晰晶粒组成。根据计算,生长样品的光带隙在 1.95 - 2.20 eV 之间。Cu2O 薄膜的性能测试方法是在零偏压条件下,在光电化学电池中估算 LED "开/关 "调制表面光电压。
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Texture and Bandgap Tuning of Phase Pure Cu2O Thin Films Grown by a Simple Potentiostatic Electrodeposition Technique
Highly-textured phase pure Cu2O thin films have been grown on fluorine-doped SnO2 substrates by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). Surface morphology characterization by scanning electron microscopy revealed that the deposited thin films coherently carpet the underlying substrate and are composed of sharp faceted well-defined grains of 0.5 – 1.0 µm sizes. The optical bandgap of the as-grown samples was calculated in the range of 1.95 – 2.20 eV. The performance of Cu2O films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.
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