8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

β-Ga2O3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperatures, optimizing the epitaxial surface by reducing the surface roughness and dislocation density. Combined with mesa termination, the results showed that the breakdown voltage (Vbr) significantly increased from 845 V to 1532 V. The device with a 3 × 3 mm2 anode size was fabricated simultaneously, and the high forward currents of 8.7 A@2 V and Vbr > 700 V were achieved. This work shows a possible solution for the commercialization of β-Ga2O3 SBDs.