镍、锡共掺杂氧化锌纳米粒子的制备、表征和抗菌活性:锡掺杂浓度的影响

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-03-08 DOI:10.1016/j.jcrysgro.2024.127660
L.Bruno Chandrasekar , M.Divya Gnaneswari , A.Murugeswari , P.Shunmuga Sundaram , N.Ananthan , M.Karunakaran
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引用次数: 0

摘要

采用化学方法在室温下制备了镍、锡共掺杂氧化锌纳米粒子。评估并讨论了锡对所制备纳米粒子的结构、形态、光学、电学和抗微生物特性的影响。晶体尺寸和单胞特性受锡掺杂浓度的影响。锡的添加增强了纳米粒子的质构系数。随着锡掺杂浓度的增加,材料的光带隙发生蓝移。制备的纳米粒子的空穴浓度高于电子浓度。掺杂浓度越高,纳米粒子越透明。评估了锡浓度对大肠杆菌、金黄色葡萄球菌和绿脓杆菌的影响。
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Preparation, characterization, and antibacterial activity of Ni, Sn co-doped ZnO nanoparticles: Effect of Sn doping concentration

Ni, Sn co-doped ZnO nanoparticles have been prepared by chemical method at room temperature. The effects of Sn on the structural, morphological, optical, electrical, and anti-microbial properties of the prepared nanoparticles have been evaluated and discussed. The crystallite size and the unit cell properties have been influenced by the doping concentration of Sn. The addition of Sn enhances the texture coefficient of the nanoparticles. The optical band gap of the material is blue-shifted as the doping concentration of Sn increases. The prepared nanoparticles have high hole concentration than electron concentration. The nanoparticles became more transparent at high doping concentrations. The effect of Sn concentration against E. coli, S. aureus, and P. aeruginosa has been evaluated.

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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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